参数资料
型号: 2N5664SMDR4
厂商: SEMELAB LTD
元件分类: 功率晶体管
英文描述: 3 A, 200 V, NPN, Si, POWER TRANSISTOR
封装: CERAMIC, SMD1, 3 PIN
文件页数: 2/3页
文件大小: 23K
代理商: 2N5664SMDR4
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Prelim. 5/00
LAB
SEME
2N5664SMD
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
200
250
1.0
100
10
0.4
1.2
40
120
15
125
2.0
0.25
1.5
IC = 10mA
IB = 0
IC = 10mA
REB = 100W
VCE = 200V
IB = 0
VCE = 175
TC = 150°C
VEB = 6V
IE = 0
IC = 3.0A
IB = 0.3A
IC = 3.0A
IB = 0.3A
IC = 0.5mA
VCE = 2V
IC = 1.0A
VCE = 5V
IC = 3.0A
VCE = 5V
VCB = 5.0V
f = 1MHz
VCE = 5.0V
IC = 0.5A
f = 10MHz
IC = 1.0A
VCC = 100V
IB1 = - IB2 = 30mA
IC = 1.0A
VCC = 100V
IB1 = - IB2 = 30mA
VCEO(sus)
Collector – Emitter Sustaining Voltage
VCER(sus)
Collector – Emitter Sustaining Voltage
ICES
Collector – Emitter Cut-off Current
IEBO
Emitter Base Cut-off Current
VCE(sat)
Collector – Emitter Saturation Voltage
VBE(sat)
Base – Emitter On Voltage
hFE
DC Current Gain
Cobo
Output Capacitance
[hfe]
Small Signal Current Gain
ton
Turn on time
toff
Turn off time
V
mA
V
pF
msec
mA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
1) ft is defined as the frequency at which |hfe| extrapolates to untity.
相关PDF资料
PDF描述
2N5664SMD05-JQR-A 3 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-276AA
2N5664SMD05-JQR-B 3 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-276AA
2N5664SMD05 3 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-276AA
2N5664SMD05R4 3 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-276AA
2N5666SJV 5 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-39
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