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参数资料
| 型号： | 2N5679-JQR-B |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封装： | METAL CAN, TO-39, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 15K |
| 代理商： | 2N5679-JQR-B |
DESCRIPTION
The 2N5679 and 2N5680 are silicon epitaxial
planar PNP transistors in jedec TO-39 metal
case intended for use as drivers for high
power transistors in general purpose,
amplifier and switching circuit
The complementary NPN types are the
2N5681 and 2N5682 respectively
ABSOLUTE MAXIMUM RATINGS
TCASE = 25°c unless otherwise stated
2N5680
2N5679
2N5679
2N5680
Document Number 3076
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
PNP SILICON
TRANSISTORS
VCBO
Collector – Base Voltage
VCEO
Collector – Emitter Voltage (IB = 0)
VEBO
Emitter – Base Voltage (IC = 0)
IC
Continuous Collector Current
IB
Base Current
Ptot
Total Dissipation at
Tcase ≤ 25°C
Tamb ≤ 25°C
Tstg
Operating and Storage Temperature Range
Tj
Junction temperature
-100V
-120V
-100V
-120V
-4V
-1A
-0.5A
10W
1W
–65 to +200°C
200°C
MECHANICAL DATA
Dimensions in mm (inches)
0.89
(0.035)
max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
1.14 (0.045)
TO-39 (TO-205AD)
Pin 1 – Emitter
Pin 2 – Base
Pin 3 – Collector
相关PDF资料 |
PDF描述 |
|---|---|
| 2N5679-JQR-BR1 | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N5679.MODR1 | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N5679-JQR-A | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N5680.MOD | 1000 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N5679 | 1 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-5 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5680 | 功能描述:两极晶体管 - BJT PNP Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5680 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
| 2N5681 | 功能描述:两极晶体管 - BJT NPN Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5681SMD | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN |
| 2N5681SMD05 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SMT |
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