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参数资料
| 型号： | 2N5679-JQR-BR1 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封装： | METAL CAN, TO-39, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 15K |
| 代理商： | 2N5679-JQR-BR1 |
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
A
mA
A
V
MHz
pF
Rthj-case
Rthj-amb
17.5
175
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
°C/W
-1
-10
-1
-100
-120
-0.6
-1
-2
-1
40
150
5
30
50
40
2N5679
2N5680
Document Number 3076
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
ICBO
ICEV
ICEO
IEBO
VCEO(sus)*
VCE(sat)*
VBE*
hFE*
fT
CCBO
hfe
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Sustaining Voltage
Collector Emitter Saturation Voltage
Base Emitter Voltage
DC Current Gain
Transistion Frequency
Collector Base Capacitance
Small Signal Current Gain
IE = 0
for 2N5679
VCB = -100V
for 2N5680
VCB = -120V
VBE = 1.5
for 2N5679
VCE = -100V
for 2N5680
VCE = -120V
Tcase = 150°C
for 2N5679
VCE = -100V
for 2n5680
VCE = -120V
IB = 0
for 2N5679
VCE = -70V
for 2N5680
VCE = -80V
IC = 0
VEB = -4V
IB = 0
IC = -10mA
for 2N5679
for 2N5680
IC = -250mA
IB = -25mA
IC = -500mA
IB = -50mA
IC = -1A
IB = -200mA
IC = -250mA
VCE = -2V
IC = -250mA
VCE = -2V
IC = -1A
VCE = -2V
IC = -100mA
VCE = -10V
f = 10MHz
IE = 0
VCB = -20V
f = 1MHz
IC = -0.2A
VCE = -1.5V
f = 1KHz
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
* Pulse test tp = 300s , δ < 2%
THERMAL DATA
相关PDF资料 |
PDF描述 |
|---|---|
| 2N5679.MODR1 | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N5679-JQR-A | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N5680.MOD | 1000 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N5679 | 1 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-5 |
| 2N5679 | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5680 | 功能描述:两极晶体管 - BJT PNP Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5680 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
| 2N5681 | 功能描述:两极晶体管 - BJT NPN Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5681SMD | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN |
| 2N5681SMD05 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SMT |
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