参数资料
型号: 2N5685
元件分类: 功率晶体管
英文描述: 50 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA
文件页数: 1/2页
文件大小: 30K
代理商: 2N5685
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2137 is N-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
FEATURES
Low On-Resistance
2SK2137: RDS(on) = 2.4
(VGS = 10 V, ID = 2.0 A)
Low Ciss
Ciss = 550 pF TYP.
High Avalanche Capability Ratings
Isolate TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage
VDSS
600
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±4.0
A
Drain Current (pulse)*
ID(pulse)
±16
A
Total Power Dissipation (Tc = 25 C)
PT1
30
W
Total Power Dissipation (TA = 25 C)
PT2
2.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150 C
Single Avalanche Current**
IAS
4.0
A
Single Avalanche Energy**
EAS
5.3
mJ
*
PW
≤ 10
s, Duty Cycle ≤ 1 %
** Starting Tch = 25 C, RG = 25
, VGS = 20 V → 0
2SK2137
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DIMENSIONS
(in millimeters)
10.0±0.3
4.5±0.2
3.2±0.2
2.7±0.2
2.5±0.1
1.3±0.2
1.5±0.2
2.54
0.7±0.1
2.54
0.65±0.1
123
3±0.1
4±0.2
15.0±0.3
12.0±
0.2
13.5MIN.
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Body
Diode
Source
Drain
Gate
Document No. TC-2508
(O. D. No. TC-8067)
Date Published December 1994 P
Printed in Japan
1994
DATA SHEET
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2N5685 50 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA
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