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参数资料
| 型号： | 2N5784-JQR-B |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3500 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 文件页数： | 1/3页 |
| 文件大小： | 38K |
| 代理商： | 2N5784-JQR-B |
Document Number 3078
Issue 1
2N5784
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
SILICON EPITAXIAL
NPN TRANSISTOR
FEATURES
General purpose power transistor for
switching and linear applications in a
hermetic TO–39 package.
VCBO
Collector – Base Voltage
VCER(sus)
Collector – Emitter Sustaining Voltage
RBE = 100
VCEO(sus)
Collector – Emitter Sustaining Voltage
VEBO
Emitter – Base Voltage
IC
Continuous Collector Current
IB
Continuous Collector Current
PD
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
Total Device Dissipation
TC = 25°C
Derate above 25°C
TJ , TSTG
Operating Junction and Storage Temperature Range
TL
Lead temperature,
≥ 1/
32” (0.8mm) from seating plane for 10 s max.
80V
65V
5V
3.5A
1A
10W
0.057W/°C
1W
0.0057W/°C
–65 to +200°C
230°C
MECHANICAL DATA
Dimensions in mm (inches)
TO–39 PACKAGE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
PIN 1 – Emitter
PIN 2 – Base
PIN 3 – Collector
0.89
(0.035)
max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
1.14 (0.045)
相关PDF资料 |
PDF描述 |
|---|---|
| 2N5784R1 | 3500 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N5784 | 3500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N5785SMD05-JQR-AR4 | 3.5 A, 65 V, NPN, Si, POWER TRANSISTOR, TO-276AA |
| 2N5785SMD05-JQR-BR4 | 3.5 A, 65 V, NPN, Si, POWER TRANSISTOR, TO-276AA |
| 2N5785SMD05-JQR-A | 3.5 A, 65 V, NPN, Si, POWER TRANSISTOR, TO-276AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5784SMD | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| 2N5784SMD05 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN |
| 2N5785 | 功能描述:两极晶体管 - BJT NPN Switch SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5785SMD | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| 2N5785SMD05 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 3.5A I(C) | SMT |
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