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参数资料
| 型号： | 2N5785N1 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | POWER TRANSISTOR, TO-276AA |
| 封装： | HERMETIC SEALED, METAL, SMD0.5, 3 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 340K |
| 代理商： | 2N5785N1 |
2004 Oct 28
3
Philips Semiconductors
Product specication
PNP high-voltage transistor
2N5401
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = 120 V; IE =0 A
50
nA
VCB = 120 V; IE = 0 A; Tj = 100 °C
50
A
IEBO
emitter-base cut-off current
VEB = 4 V; IC =0 A
50
nA
hFE
DC current gain
IC = 1mA
50
IC = 10 mA
60
240
IC = 50 mA
50
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 1mA
200
mV
IC = 50 mA; IB = 5mA
500
mV
Cc
collector capacitance
VCB = 10 V; IE =ie = 0 A; f = 1 MHz
6pF
fT
transition frequency
VCE = 10 V; IC = 10 mA; f = 100 MHz 100
300
MHz
F
noise gure
VCE = 5 V; IC = 200 A; RS =2k;
f = 10 Hz to 15.7 kHz
8pF
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
150
200
50
100
MGD813
101
1
10
102
103
hFE
IC mA
VCE = 5 V
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相关代理商/技术参数 |
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| 2N5785SMD | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
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| 2N5786 | 功能描述:两极晶体管 - BJT NPN Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5786_02 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:SILICON EPITAXIAL NPN TRANSISTOR |
| 2N579 | 制造商:RCA 功能描述: |
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