参数资料
型号: 2N5875
厂商: AMERICAN MICROSEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3
封装: TO-3, 2 PIN
文件页数: 1/1页
文件大小: 235K
代理商: 2N5875
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2N5875 Availability
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2N5875 Information
Category Transistors
2N5875 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 60
V(BR)CBO (V) : 60
I(C) Max. (A) : 10
Absolute Max. Power Diss. (W) : 150#
Maxim um Operating Tem p (шC) : 200х
I(CBO) Max. (A) : 500u
@V(CBO) (V) (Test Condition) : 60
V(CE)sat Max. (V) : 3.0
@I(C) (A) (Test Condition) : 10
@I(B) (A) (Test Condition) : 2.5
h(FE) Min. Current gain. : 20
h(FE) Max. Current gain. : 100
@I(C) (A) (Test Condition) : 4.0
@V(CE) (V) (Test Condition) : 4.0
f(T) Min. (Hz) Transition Freq : 4.0M
@I(C) (A) (Test Condition) : 500m
@V(CE) (V) (Test Condition) : 10
t(d) Max. (s) Delay tim e. :
t(r) Max. (s) Rise tim e : 700n
t(on) Max. (s) On tim e. :
t(s) Max. (s) Storage tim e. : 1.0u
t(f) Max. (s) Fall tim e. : 800n
t(off) Max. (s) Off tim e :
Package Style : TO-3
Mounting Style : T
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supply virtually any existing discrete com ponent, integrated circuit, or other hard-to-find electronic part for all your needs - big or sm all.
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相关PDF资料
PDF描述
2N5876 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA
2N5876 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
2N5878 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N5879 15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3
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