参数资料
型号: 2N587
厂商: AMERICAN MICROSEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: 7 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3
封装: TO-3, 2 PIN
文件页数: 1/2页
文件大小: 263K
代理商: 2N587
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2N5871 Information
Category Transistors
Class Transistors; Bipolar; Si PNP Power
Type Transistors; Bipolar; Si PNP Power
2N5871 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 60
V(BR)CBO (V) : 60
I(C) Max. (A) : 7.0
Absolute Max. Power Diss. (W) : 100#
Maximum Operating Temp (шC) : 200х
I(CBO) Max. (A) : 250u
@V(CBO) (V) (Test Condition) : 60
V(CE)sat Max. (V) : 2.0
@I(C) (A) (Test Condition) : 7.0
@I(B) (A) (Test Condition) : 1.75
h(FE) Min. Current gain. : 20
h(FE) Max. Current gain. : 100
@I(C) (A) (Test Condition) : 2.5
@V(CE) (V) (Test Condition) : 4.0
f(T) Min. (Hz) Transition Freq : 4.0M
@I(C) (A) (Test Condition) : 250m
@V(CE) (V) (Test Condition) : 10
t(d) Max. (s) Delay time. :
t(r) Max. (s) Rise time : 700n
t(on) Max. (s) On time. :
t(s) Max. (s) Storage time. : 1.0u
t(f) Max. (s) Fall time. : 800n
t(off) Max. (s) Off time :
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2N5871 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio...
http://www.americanmicrosemi.com/information/spec/?ss_pn=2N5871
1 of 2
11/7/2009 2:15 AM
相关PDF资料
PDF描述
2N5881 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
2N5956 6 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-66
2N5885 25 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
2N5804 5 A, 225 V, NPN, Si, POWER TRANSISTOR, TO-3
2N5875 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3
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