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参数资料
| 型号： | 2N5954LEADFREE |
| 厂商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 6 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-66 |
| 封装： | TO-66, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 431K |
| 代理商： | 2N5954LEADFREE |
2N5954
2N5955
2N5956
MAXIMUM RATINGS: (TC=25°C)
SYMBOL
2N6372
2N6373
2N6374
UNITS
Collector-Base Voltage
VCBO
90
70
50
V
Collector-Emitter Voltage
VCEV
90
70
50
V
Collector-Emitter Voltage
VCER
85
65
45
V
Collector-Emitter Voltage
VCEO
80
60
40
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
6.0
A
Continuous Base Current
IB
2.0
A
Power Dissipation
PD
40
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +200
°C
Thermal Resistance
ΘJC
4.3
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N5954
2N5955
2N5956
2N6372
2N6373
2N6374
SYMBOL
TEST CONDITIONS
MIN MAX
UNITS
ICEV
VCE=85V, VBE=1.5V, RBE=100Ω
-
100
-
μA
ICEV
VCE=65V, VBE=1.5V, RBE=100Ω
-
100
-
μA
ICEV
VCE=45V, VBE=1.5V, RBE=100Ω
-
100
μA
ICEV
VCE=85V, VBE=1.5V, RBE=100Ω, TC=150°C -
2.0
-
mA
ICEV
VCE=65V, VBE=1.5V, RBE=100Ω, TC=150°C -
-
2.0
-
mA
ICEV
VCE=45V, VBE=1.5V, RBE=100Ω, TC=150°C -
-
2.0
mA
ICER
VCE=75V
-
100
-
μA
ICER
VCE=55V
-
100
-
μA
ICER
VCE=35V
-
100
μA
ICEO
VCE=65V
-
1.0
-
mA
ICEO
VCE=45V
-
1.0
-
mA
ICEO
VCE=25V
-
1.0
mA
IEBO
VBE=5.0V
-
0.1
-
0.1
-
0.1
mA
BVCEV
IC=100mA, VBE=1.5V, RBE=100Ω
90
-
70
-
50
-
V
BVCER
IC=100mA, RBE=100Ω
85
-
65
-
45
-
V
BVCEO
IC=100mA
80
-
60
-
40
-
V
2N5954 2N5955 2N5956
PNP
2N6372 2N6373 2N6374
NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5954 and
2N6372 SERIES types are complementary Silicon
Power Transistors manufactured by the epitaxial base
process, mounted in a hermetically sealed metal case
designed for general purpose amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-66 CASE
R1 (24-November 2010)
www.centr a lsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6377 | 50 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AE |
| 2N6648 | 10 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N6328 | 30 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N6383 | 10 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N6379 | 50 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5955 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 6A 2PIN TO-66 - Bulk |
| 2N5956 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 40V 6A 2PIN TO-66 - Bulk 制造商:n/a 功能描述:2N5956 |
| 2N5957 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 20A 3PIN TO-61 - Bulk |
| 2N5958 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 100V 20A 3PIN TO-61 - Bulk |
| 2N5959 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 20A 3PIN TO-61 - Bulk |
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