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参数资料
| 型号： | 2N5961D27Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 1/7页 |
| 文件大小： | 295K |
| 代理商： | 2N5961D27Z |
2N5961
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
2N5961
This device is designed for use as low noise, high gain, general
purpose amplifiers requiring collector currents to 50 mA. Sourced
from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Val60ue
Units
VCEO
Collector-Emitter Voltage
60
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
8.0
V
IC
Collector Current - Continuous
100
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Characteristic
Max
Units
2N5961
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
C
B
E
TO-92
1997 Fairchild Semiconductor Corporation
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| 2N5962 | 功能描述:两极晶体管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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