参数资料
型号: 2N5962L34Z
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
文件页数: 1/10页
文件大小: 469K
代理商: 2N5962L34Z
2N5962/
MMBT5962
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
This device is designed for use as low noise, high gain, general
purpose amplifiers requiring collector currents to 50 mA.
Sourced from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
45
V
VCBO
Collector-Base Voltage
45
V
VEBO
Emitter-Base Voltage
8.0
V
IC
Collector Current - Continuous
100
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Characteristic
Max
Units
2N5962
*MMBT5962
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
C
B
E
SOT-23
Mark: 117
MMBT5962
2N5962
C
B
E
TO-92
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
相关PDF资料
PDF描述
2N5962J05Z 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N6033 40 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-3
2N6032 50 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3
2N5038 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3
2N5672 30 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-3
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