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参数资料
| 型号： | 2N6036 |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 417K |
| 代理商： | 2N6036 |
2N6036
PNP Darlington
Power Transistor
Features
This device is designed for general purpose amplifier and low-speed
switching applications.
Maximum Ratings*
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
80
V
VCBO
Collector-Base Voltage
80
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current, Continuous
Peak
4.0
8.0
A
IB
Base Current
100
mA
TJ
Operating Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Thermal Characteristics
Symbol
Rating
Max
Unit
PD
Total Device Dissipation
Derate above 25
OC
40
0.32
W
W/
OC
PD
Total Device Dissipation
Derate above 25
OC
1.5
0.012
W
W/
OC
RJC
Thermal Resistance, Junction to Case
3.12
OC/W
RJA
Thermal Resistance, Junction to Ambient
83.3
OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
VCEO(sus)
Collector-Emitter Breakdown Voltage
(1)
(IC=100mAdc, IE=0)
80
---
Vdc
ICEO
Collector Cutoff Current
(VCB=60Vdc, IE=0)
---
100
uAdc
ICEX
Collector Cutoff Current
(VCE=80Vdc, VEB(off)=1.5Vdc)
(VCE=80Vdc, VEB(off)=1.5Vdc, TC=125
OC)
---
100
500
uA
mA
ICBO
Collector-Cutoff Current
(VCB=80Vdc, IE=0)
---
0.5
mAdc
IEBO
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
---
2.0
mAdc
*Indicates JEDEC Registered Data
!
E
A
D
F
G
H
J
C
B
L
M
P
Q
N
R
K
PIN 1.
EMITTER
PIN 2.
COLLECTOR
1
2
3
PIN 3.
BASE
Revision: 3
2006/05/17
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
TM
Micro Commercial Components
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Marking:2N6036
www.mccsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6036_00 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| 2N6036_09 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Complementary power Darlington transistors |
| 2N6036G | 功能描述:达林顿晶体管 4A 80V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6037 | 功能描述:达林顿晶体管 NPN Pwr Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6037ECB | 制造商:National Semiconductor 功能描述:2N6037 |
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