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参数资料
| 型号： | 2N6043 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | PLASTIC, CASE 221A-06, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 174K |
| 代理商： | 2N6043 |
2N6040 thru 2N6042 2N6043 thru 2N6045
3
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.5
0.2
0.1
0.05
0.02
r(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
θJC(t) = r(t) θJC
θJC = 1.67°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.1
0.7
0.3
0.07
0.03
0.02 0.03
0.3
3.0
30
300
SINGLE PULSE
0.01
20
1.0
Figure 5. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
5.0
2.0
1.0
0.02
2.0
3.0
7.0
50
100
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
70
I C
,COLLECT
OR
CURRENT
(AMP)
TJ = 150°C
dc
1.0 ms
100
s
0.5
0.2
0.05
5.0
2N6040, 2N6043
2N6041, 2N6044
2N6045
0.1
10
20
30
500
s
5.0 ms
CURVES APPLY BELOW RATED VCEO
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
300
Figure 6. Small–Signal Current Gain
VR, REVERSE VOLTAGE (VOLTS)
30
0.5
1.0
2.0
100
5.0
0.1
0.2
C,
CAP
ACIT
ANCE
(pF)
200
70
50
TJ = 25°C
Cib
100
Cob
PNP
NPN
10,000
1.0
Figure 7. Capacitance
f, FREQUENCY (kHz)
10
2.0
5.0
20
50
1000
100
10
20
h
fe
,SMALL–SIGNAL
CURRENT
GAIN
5000
3000
2000
1000
500
300
200
100
50
30
20
200
500
PNP
NPN
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
50
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6044 | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2N6050R1 | 12 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N6050 | 12 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N6050 | 12 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N6051 | 12 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6043G | 功能描述:达林顿晶体管 8A 60V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6044 | 功能描述:达林顿晶体管 NPN Darl Pwr RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6045 | 功能描述:达林顿晶体管 NPN Darl SW RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6045G | 功能描述:达林顿晶体管 8A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6046 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 20A 3PIN TO-63 - Bulk |
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