参数资料
型号: 2N6054
厂商: AMERICAN MICROSEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
封装: TO-3, 2 PIN
文件页数: 1/2页
文件大小: 237K
代理商: 2N6054
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Military/High-Rel:
N
V(BR)CEO (V):
80
V(BR)CBO (V):
80
I(C) Max. (A):
8.0
Absolute Max. Power Diss. (W):
100#
Maximum Operating Temp (C):
200
I(CBO) Max. (A):
500u°
@V(CBO) (V) (Test Condition):
40
h(FE) Min. Current gain.:
750
h(FE) Max. Current gain.:
18k
@I(C) (A) (Test Condition):
4.0
@V(CE) (V) (Test Condition):
3.0
f(T) Min. (Hz) Transition Freq:
4.0M
@I(C) (A) (Test Condition):
5.0
@V(CE) (V) (Test Condition):
3.0
V(CE)sat Max. (V):
3.0
@I(C) (A) (Test Condition):
8.0
@I(B) (A) (Test Condition):
80m
Semiconductor Material:
Silicon
Package Style:
TO-3
Mounting Style:
T
Junction Temperature
Part Number: 2N6054
2N6054
Darlingt o n C o m ple m e ntary Silico n Po w e r Transis t o r
In Stock 34 Brand New Available from $ 2.86
Manufacturer Partnumber:
2N6054
List Price:
$ 3.58
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Specifications
PNP
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2N6054 Darlington Complementary Silicon Power Transistor 2.86 Transi...
http://store.americanmicrosemiconductor.com/2n6054.html
1 of 2
4/13/2010 12:03 AM
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2N6055 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
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相关代理商/技术参数
参数描述
2N6055 功能描述:达林顿晶体管 NPN Pwr Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
2N6055_12 制造商:COMSET 制造商全称:Comset Semiconductor 功能描述:POWER COMPLEMENTARY SILICON TRANSISTORS
2N6056 制造商:ON Semiconductor 功能描述:TRANSISTOR DARLINGTON TO-3
2N6056/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN Darlington Silicon Power Transistor
2N6057 功能描述:达林顿晶体管 NPN Pwr Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel