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参数资料
| 型号： | 2N6058-JQR-A |
| 厂商： | SEMELAB LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | HERMETIC SEALED, METAL, TO-3, 2 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 12K |
| 代理商： | 2N6058-JQR-A |
2N6058
Bipolar NPN Device.
V
CEO =
80V
I
C = 12A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications.
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
80
V
I
C(CONT)
12
A
h
FE
@ 3/6 (V
CE / IC)
750
-
f
t
4M
Hz
P
D
150
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
31-Jul-02
TO3 (TO204AA)
PINOUTS
1 – Base
2 – Emitter
Case - Collector
Bipolar NPN Device in a
Hermetically sealed TO3
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
12
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.
61
(
1
.52)
39.
12
(
1
.54)
29.
9
(
1
.177)
30.
4
(
1
.197)
16.
64
(
0
.655)
17.
15
(
0
.675)
3.84 (0.151)
4.09 (0.161)
0.
97
(
0
.060)
1.
10
(
0
.043)
7.92 (0.312)
12.70 (0.50)
22.
23
(0
.875)
ma
x
.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6058 | 12 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N6056 | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N6385 | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N6059-JQR-BR1 | 12 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N6059-JQR | 12 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6058JTX | 制造商:MILITARY SPECIFICATIONS P 功能描述: |
| 2N6059 | 功能描述:达林顿晶体管 NPN Darlington LTB 9-2009 RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6059 | 制造商:STMicroelectronics 功能描述:DARLINGTON TRANSISTOR TO-3 |
| 2N6059 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-3 |
| 2N6059_03 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:SILICON NPN POWER DARLINGTON TRANSISTOR |
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