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参数资料
| 型号： | 2N6107 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 70 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | PLASTIC, CASE 221A-06, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 149K |
| 代理商： | 2N6107 |
1
Motorola Bipolar Power Transistor Device Data
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general–purpose amplifier and switching applications.
DC Current Gain Specified to 7.0 Amperes
hFE = 30–150 @ IC = 3.0 Adc — 2N6111, 2N6288
hFE = 2.3 (Min) @ IC = 7.0 Adc — All Devices
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 30 Vdc (Min) — 2N6111, 2N6288
VCEO(sus) = 50 Vdc (Min) — 2N6109
VCEO(sus) = 70 Vdc (Min) — 2N6107, 2N6292
High Current Gain — Bandwidth Product
fT = 4.0 MHz (Min) @ IC = 500 mAdc — 2N6288, 90, 92
fT = 10 MHz (Min) @ IC = 500 mAdc — 2N6107, 09, 11
TO–220AB Compact Package
*MAXIMUM RATINGS
Rating
Symbol
2N6111
2N6288
2N6109
2N6107
2N6292
Unit
Collector–Emitter Voltage
VCEO
30
50
70
Vdc
Collector–Base Voltage
VCB
40
60
80
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
7.0
10
Adc
Base Current
IB
3.0
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
40
0.32
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
3.125
_C/W
* Indicates JEDEC Registered Data.
40
0
20
40
60
80
100
120
160
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
20
30
140
10
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6107/D
2N6057 thru 2N6059
(See 2N6050)
Motorola, Inc. 1995
2N6107
2N6109
2N6111
2N6288
2N6292
*Motorola Preferred Device
7 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
30 – 50 – 70 VOLTS
40 WATTS
*
CASE 221A–06
TO–220AB
PNP
NPN
REV 2
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6111 | 7 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2N6111 | 7 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 2N6123 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 2N6122 | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 2N6121 | 4 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-220 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6107/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Complementary Silicon Plastic Power Transistors |
| 2N6107_11 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:7 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 30 a?? 50 a?? 70 VOLTS, 40 WATTS |
| 2N610716 | 制造商:Harris Corporation 功能描述: |
| 2N6107G | 功能描述:两极晶体管 - BJT 7A 70V 40W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6107NSC | 制造商:National Semiconductor 功能描述:2N6107 S9G4B |
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