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参数资料
| 型号： | 2N6107 |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 70 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | PLASTIC, TO-220, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 380K |
| 代理商： | 2N6107 |
2N6107
PNP Silicon
Complementary
Power Transistor
Features
This device is designed for use in general purpose amplifier and
switching applications.
Maximum Ratings*
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
70
V
VCBO
Collector-Base Voltage
80
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current, Continuous
Peak
7.0
10
A
IB
Base Current
3.0
A
TJ
Operating Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Thermal Characteristics
Symbol
Rating
Max
Unit
PD
Total Device Dissipation
Derate above 25
OC
40
0.32
W
W/
OC
RJC
Thermal Resistance, Junction to Case
3.125
OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
VCEO(sus)
Collector-Emitter Breakdown Voltage
(1)
(IC=100mAdc, IE=0)
70
---
Vdc
ICEO
Collector Cutoff Current
(VCB=60Vdc, IE=0)
---
1.0
mAdc
ICEX
Collector Cutoff Current
(VCE=80Vdc, VEB(off)=1.5Vdc)
(VCE=70Vdc, VEB(off)=1.5Vdc, TC=125
OC)
---
100
2.0
uA
mA
IEBO
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
---
1.0
mAdc
ON CHARACTERISTICS(1)
hFE
DC Current Gain
(VCE=4.0Vdc, IC=2.0Adc)
(VCE=4.0Vdc, IC=7.0Adc)
30
2.3
150
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=7.0Adc, IB=3.0Adc)
---
3.5
Vdc
VBE(on)
Base-Emitter On Voltage
(IC=7.0Adc, VCE=4.0Vdc)
---
3.0
Vdc
*Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
INCHES
MM
A
.560
.625
14.22
15.88
B
.380
.420
9.65
10.67
C
.100
.135
2.54
3.43
D
.230
.270
5.84
6.86
E
.380
.420
9.65
10.67
F
------
.250
------
6.35
G
.500
.580
12.70
14.73
H
.090
.110
2.29
2.79
I
.020
.045
0.51
1.14
J
.012
.025
0.30
0.64
K
.139
.161
3.53
4.09
L
.140
.190
3.56
4.83
M
.045
.055
1.14
1.40
N
.080
.115
2.03
2.92
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
TO-220
PIN
PIN 1.
BASE
PIN 2.
COLLECTOR
1
2
3
PIN 3.
EMITTER
Revision: 3
2006/05/17
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
TM
Micro Commercial Components
www.mccsemi.com
1 of 3
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Marking:2N6107
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6107/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Complementary Silicon Plastic Power Transistors |
| 2N6107_11 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:7 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 30 a?? 50 a?? 70 VOLTS, 40 WATTS |
| 2N610716 | 制造商:Harris Corporation 功能描述: |
| 2N6107G | 功能描述:两极晶体管 - BJT 7A 70V 40W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6107NSC | 制造商:National Semiconductor 功能描述:2N6107 S9G4B |
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