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参数资料
| 型号： | 2N6193 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封装： | HERMETIC SEALED, METAL CAN-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 198K |
| 代理商： | 2N6193 |
2SK3652
2
SJG00034AED
Safe operation area
Drain
current
I
D
(A
)
Drain-source voltage V
DS (V)
101
10
1
100
1 000
1
10
100
1 000
IDP
ID
DC
t
= 100 s
t
=
1 ms
t
=
10 ms
Non repetitive pulse
TC
= 25°C
t
=
100 ms
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Diode foward voltage
VDSF
IDR = 50 A, VGS = 0
1.5
V
Reverse recovery time
trr
L
= 230 H, V
DD = 100 V
235
ns
Reverse recovery charge
Qrr
IDR
= 25 A, di/dt = 100 A/s1 180
nC
Gate charge load
Qg
VDD = 100 V, ID = 25 A
105
nC
Gate-source charge
Qgs
VGS = 10 V
40
nC
Gate-drain charge
Qgd
14
nC
Thermal resistance (ch-c)
Rth(ch-c)
1.25
°C/W
Thermal resistance (ch-a)
Rth(ch-a)
41.6
°C/W
■ Electrical Characteristics (continued) T
C = 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
This product complies with the RoHS Directive (EU 2002/95/EC).
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PDF描述 |
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| 2N6235RR1 | 5 A, 275 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 2N6251 | 10 A, 375 V, NPN, Si, POWER TRANSISTOR, TO-3 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6193_02 | 制造商:SEMICOA 制造商全称:SEMICOA 功能描述:Silicon PNP Transistor |
| 2N6193A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PNP |
| 2N6193ALCC4 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:PNP SILICON TRANSISTORS |
| 2N6193J | 制造商:Motorola Inc 功能描述: |
| 2N6193JAN | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT PNP 100V 5A 3-Pin TO-39 |
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