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参数资料
| 型号： | 2N6200 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 1/1页 |
| 文件大小： | 32K |
| 代理商： | 2N6200 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 200 mA
35
V
BVCES
IC = 200 mA
65
V
BVEBO
IE = 10 mA
4.0
V
ICBO
VCB = 30 V
1.0
mA
ICES
VCE = 30 V
10
mA
hFE
VCE = 5.0 V
IC = 500 mA
5.0
200
---
COB
VCB = 30 V
f = 1.0 MHz
65
pF
GP
η
C
VCE = 28 V
POUT = 40 W
f = 175 MHz
7.6
60
---
dB
%
NPN SILICON RF POWER TRANSISTOR
2N6200
DESCRIPTION:
The
ASI 2N6200 is Designed for
wideband large-signal amplifier stages
in the 125 – 175 MHz range.
FEATURES:
Minimum Gain = 7.6 dB
Output Power = 40 W
Omnigold Metalization System
MAXIMUM RATINGS
IC
5.0 A
VCBO
65 V
VCEO
35 V
VEBO
4.0 V
PDISS
60 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +200 °C
θ
JC
2.9 °C/W
PACKAGE STYLE .380 4L STUD
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
inches / mm
H
.090 / 2.29
.100 / 2.54
DIM
.220 / 5.59
.230 / 5.84
.490 / 12.45
.450 / 11.43
I
J
.155 / 3.94
.175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E
F
D
C
B
.112x45°
G
H
J
I
A
#8-32 UNC-2A
E
C
B
E
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