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参数资料
| 型号： | 2N6212 |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-213AA |
| 封装： | TO-66, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 56K |
| 代理商： | 2N6212 |
TECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/461
Devices
Qualified Level
2N6211
2N6212
2N6213
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N6211 2N6212 2N6213 Unit
Collector-Emitter Voltage
VCEO
225
300
350
Vdc
Collector-Base Voltage
VCBO
275
350
400
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Base Current
IB
1.0
Adc
Collector Current
IC
2.0
Adc
Total Power Dissipation
@ TA = +25
0C (1)
@ TC = +25
0C (2)
PT
3.0
35
W
Operating & Storage Temperature
Top, Tstg
-55 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance Junction-to-Case
RθJC
5.0
0C/W
1)
Derate linearly 17.1 mW/
0C for TA > +250C
2)
Derate linearly 200 mW/
0C for TC > +250C
TO-66*
(TO-213AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, f = 30-60 Hz
2N6211
2N6212
2N6213
V(BR)CEO
225
300
350
Vdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, f = 30-60 Hz, RBE = 50
2N6211
2N6212
2N6213
V(BR)CER
250
325
375
Vdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, f = 30-60 Hz, RBE = 50 , VBE = -1.5 Vdc
2N6211
2N6212
2N6213
V(BR)CEX
275
350
400
Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6212 | 2 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-66 |
| 2N6213 | 2 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-66 |
| 2N6214 | 2 A, 400 V, PNP, Si, POWER TRANSISTOR, TO-213AA |
| 2N6211 | 2 A, 225 V, PNP, Si, POWER TRANSISTOR, TO-213AA |
| 2N6230 | 10 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6213 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 350V 2A 3PIN TO-66 - Bulk 制造商:CENTRAL SEMICONDUCTOR 功能描述:2N Series 350 V 2 A PNP Through Hole Silicon Power Transistor - TO-66 |
| 2N6214 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 400V 2A 2PIN TO-66 - Bulk |
| 2N6215 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 2A 3PIN TO-63 - Bulk |
| 2N6216 | 制造商:undefined 功能描述: |
| 2N6217 | 制造商:JMNIC 制造商全称:Quanzhou Jinmei Electronic Co.,Ltd. 功能描述:Silicon NPN Power Transistors |
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