参数资料
型号: 2N6277-JQR-A
厂商: SEMELAB LTD
元件分类: 功率晶体管
英文描述: 50 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-204AE
封装: HERMETIC SEALED, METAL, TO-3, 2 PIN
文件页数: 1/3页
文件大小: 197K
代理商: 2N6277-JQR-A
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8537
Issue 1
Page 1 of 3
2N6277
High VCEO.
High DC Current Gain, hFE.
Low Collector-Emitter Saturation Voltage, VCE(sat).
Fast Switching.
Hermetic TO3 Metal package.
Ideally suited for Power Amplifier and Switching Applications.
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
C = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
180V
VCEO
Collector – Emitter Voltage
150V
VEBO
Emitter – Base Voltage
6V
IC
Continuous Collector Current
50A
ICM
Peak Collector Current
100A
IB
Base Current
20A
PD
Total Power Dissipation at
TC = 25°C
250W
Derate Above 25°C
1.43W/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
Min.
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction To Case
0.7
°C/W
相关PDF资料
PDF描述
2N6277 50 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-204AE
2N6277-JQR-B 50 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-204AE
2N6277 50 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-3
2N6275 50 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-3
2N6282 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
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