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参数资料
| 型号： | 2N6301SMDR4 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-276AB |
| 封装： | SMD1-3 |
| 文件页数： | 2/3页 |
| 文件大小： | 29K |
| 代理商： | 2N6301SMDR4 |
Document Number 2660
Issue 2
2N6299SMD
2N6299SMD05
2N6301SMD
2N6301SMD05
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Collector – Emitter Sustaining
Voltage *
Collector Cut–off Current
Emitter Cut–off Current
DC Current Gain*
Collector – Emitter Saturation
Voltage*
Base – Emitter Saturation Voltage*
Base – Emitter On Voltage*
Output Capacitance
Magnitude of Common Emitter
Small Signal Short Circuit Current
Transfer Ratio
Small Signal Current Gain*
80
0.5
5.0
2
750
18000
100
2.0
3.0
4.0
2.8
200
25
350
300
V
mA
—
V
pF
—
VCEO(sus)
ICEO
ICEX
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
Cob
hfe
hfe
Notes
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS
OFF CHARACTERISTICS
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
* Pulse test: tp = 300s , Duty Cycle = 2%
IC = 100mA
IB = 0
VCE = 40V
IB = 0
VCE = Rated VCB VBE(off) = 1.5V
TC = 150°C
VBE = 5V
IC = 0
VCE = 3V
IC = 4A
VCE = 3V
IC = 8A
IC = 4A
IB = 16mA
IC = 8A
IB = 80mA
IC = 8A
IB = 80mA
VCE = 3V
IC = 4A
VCB = 10V
IE = 0
f = 0.1MHz
VCE = 3V
IC = 3A
f = 1MHz
VCE = 3V
IC = 3A
f = 1kHz
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6299-JQR-B | 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-66 |
| 2N6299SMD | 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-276AB |
| 2N6301SMD-JQR-BR4 | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-276AB |
| 2N6301SMD-JQR-A | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-276AB |
| 2N6299SMD-JQR | 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-276AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6302 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device |
| 2N6303 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 80V 3A 3PIN TO-5 - Bulk |
| 2N6304 | 制造商:Motorola 功能描述:2N6304 MOT |
| 2N6305 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72 |
| 2N6306 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 250V 8A 3PIN TO-3 - Bulk 制造商:Microsemi 功能描述:Microsemi 2N6306 GP BJTs |
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