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参数资料
| 型号： | 2N6318.MOD |
| 厂商： | SEMELAB LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 封装： | TO-66, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 18K |
| 代理商： | 2N6318.MOD |
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Document Number 5354
Issue 1
2N6316
2N6318
VCEO
Collector – Emitter Voltage
VCBO
Collector – Base Voltage
VEBO
Emitter – Base Voltage
IC
Collector Current
Continuous
Peak
IB
Base Current
PD
Total Dissipation @ TC = 25°C
Derate above 25°C
TSTG , TJ
Operating and Storage Junction Temperature Range
RθJC
Thermal Resistance – Junction - Case
80V
5V
7A
15A
2A
90W
0.515W/°C
–65 to +200°C
1.94°C/W
MECHANICAL DATA
Dimensions in mm (inches)
24.13
(0.95)
24.63
(0.97)
14.48
(0.570)
14.99
(0.590)
3.68
(0.145) rad.
max.
3.61 (0.142)
4.08(0.161)
rad.
0.71
(0.028)
0.86
(0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94
(0.470)
12.70
(0.500)
1
2
COMPLEMENTARY SILICON
MEDIUM POWER TRANSISTORS
APPLICATIONS:
Designed for general purpose amplifier
and switching applications.
ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated)
FEATURES
Low Collector Emitter Saturation Voltage
Low Leakage Current
Excellent DC Current Gain
TO–66 (TO-213AA)
Pin 1 –Base
Pin 2 –Emitter
Case – Collector
COMPLEMENTARY TRANSISTORS
2N6316 (NPN) AND 2N6318 (PNP)
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6318-JQRR1 | 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 2N6318 | 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 2N6318R1 | 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 2N6316LEADFREE | 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N6317 | 7 A, PNP, Si, POWER TRANSISTOR, TO-213AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6322 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 200V 30A 3PIN TO-3 - Bulk |
| 2N6323 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 30A 3PIN TO-3 - Bulk |
| 2N6324 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 200V 30A 3PIN TO-63 - Bulk |
| 2N6325 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 30A 3PIN TO-63 - Bulk |
| 2N6326 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 30A 3PIN TO-3 - Bulk 制造商:GE-RCA 功能描述:Bipolar Junction Transistor, NPN Type, TO-3 |
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