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参数资料
| 型号： | 2N6341XR1 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 25 A, 135 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | METAL, TO-3, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 61K |
| 代理商： | 2N6341XR1 |
2N6341X
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 7205, ISSUE 1
DESCRIPTION
The 2N6341X is a high power silicon NPN
transistor in JEDEC TO-204AA metal case.
Intended
for
use
in
power
amplifiers
and
switching circuits for Military and Aerospace
applications
and
is
available
processed
in
accordance with the requirements of BS, CECC
and
JAN,
JANTX,
JANTXV
and
JANS
specifications.
High-Power NPN
Silicon Transistor
TO3 (TO204AA)
Pin 1 – Base
Pin 2 – Emitter Case – Collector
12
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.
61
(
1
.52)
39.
12
(
1
.54)
29.
9
(
1
.177)
30.
4
(
1
.197)
16.
64
(
0
.655)
17.
15
(
0
.675)
3.84 (0.151)
4.09 (0.161)
0.
97
(
0
.060)
1.
10
(
0
.043)
7.92 (0.312)
12.70 (0.50)
22.
23
(0
.875)
ma
x
.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
T
CASE = 25°C unless otherwise stated
V
CEO
Collector - Emitter Voltage (I
B = 0)
135V
V
CBO
Collector - Base Voltage
180V
V
EBO
Emitter – Base Voltage (I
C = 0)
6.0V
I
C
Continuous Collector Current
25A
I
B
Base Current
10A
P
tot
Total Power Dissipation at
T
amb ≤ 25°C
200W
T
case +100°C
112W
T
j,Tstg
Operating and Storage Junction Temperature Range
-65 to +200°C
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6341X | 25 A, 135 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N6351 | 5000 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-33 |
| 2N6352 | 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N6298 | 8 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-213 |
| 2N6301 | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-213 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6342 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TRIACS Silicon Bidirectional Triode Thyristors |
| 2N6342A | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:SILICON BIDIRECTIONAL THYRISTORS |
| 2N6343 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TRIACS Silicon Bidirectional Triode Thyristors |
| 2N6343A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRIAC|400V V(DRM)|6A I(T)RMS|TO-220 |
| 2N6344 | 功能描述:双向可控硅 THY 8A 600V TRIAC RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
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