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参数资料
| 型号： | 2N6387 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | PLASTIC, CASE 221A-06, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 164K |
| 代理商： | 2N6387 |
2N6387 2N6388
4
Motorola Bipolar Power Transistor Device Data
V
CE
,COLLECT
OR–EMITTER
VOL
TAGE
(VOL
TS)
0.1
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.2 0.3
0.5 0.7
1.0
2.0
10
500
300
h
FE
,DC
CURRENT
GAIN
TJ = 150°C
25
°C
– 55
°C
VCE = 4.0 V
200
7.0
20,000
5000
10,000
3000
2000
1000
3.0
5.0
Figure 9. Collector Saturation Region
3.0
IB, BASE CURRENT (mA)
0.3
0.5
1.0
2.0 3.0
5.0 7.0
30
2.6
2.2
1.8
1.4
IC = 2.0 A
TJ = 25°C
4.0 A
6.0 A
1.0
0.7
20
10
0.1
0.2 0.3
0.5 0.7
1.0
2.0
10
7.0
3.0
5.0
0
– 1.0
IC, COLLECTOR CURRENT (AMP)
VBE(sat) @ IC/IB = 250
V
,VOL
TAGE
(VOL
TS)
Figure 10. “On” Voltages
VCE(sat) @ IC/IB = 250
TJ = 25°C
VBE @ VCE = 4.0 V
0.1
0.2 0.3
0.5 0.7
1.0
2.0
10
7.0
3.0
5.0
3.0
2.5
2.0
1.5
1.0
0.5
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
V
,TEMPERA
TURE
COEFFICIENTS
(mV/
C)°
θ
*
θVC for VCE(sat)
– 55
°C to 25°C
25
°C to 150°C
*IC/IB ≤
hFE @ VCE + 4.0 V
3
– 55
°C to 25°C
25
°C to 150°C
θVB for VBE
– 2.0
– 3.0
– 4.0
– 5.0
+ 1.0
+ 2.0
+ 3.0
+ 4.0
+ 5.0
105
Figure 12. Collector Cut–Off Region
VBE, BASE–EMITTER VOLTAGE (VOLTS)
102
101
100
,COLLECT
OR
CURRENT
(
A)
I C
10– 1
VCE = 30 V
TJ = 150°C
100
°C
25
°C
REVERSE
FORWARD
103
104
+ 0.2 + 0.4
0
– 0.2
– 0.4
– 0.6
+ 0.6 + 0.8
+ 1.0 + 1.2 + 1.4
Figure 13. Darlington Schematic
BASE
COLLECTOR
EMITTER
[ 8.0 k
[ 120
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6387/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Plastic Medium-Power Transistors |
| 2N6387_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS |
| 2N6387_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Plastic Medium-Power Silicon Transistors |
| 2N6387G | 功能描述:达林顿晶体管 10A 60V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6388 | 功能描述:达林顿晶体管 NPN Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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