- 您现在的位置：买卖IC网 > PDF目录41445 > 2N6425AR1 (SEMELAB LTD) 250 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-213AA PDF资料下载
参数资料
| 型号： | 2N6425AR1 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 250 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-213AA |
| 封装： | HERMETIC SEALED, METAL, TO-66, 2 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 11K |
| 代理商： | 2N6425AR1 |
2N6425A
Bipolar PNP Device.
V
CEO =
300V
I
C = 0.25A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
300
V
I
C(CONT)
0.25
A
h
FE
@ 10/0.1 (V
CE / IC)
35
200
-
f
t
10M
Hz
P
D
20
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
1-Aug-02
TO66 (TO213AA)
PINOUTS
1 – Base
2 – Emitter
Case – Collector
Bipolar PNP Device in a
Hermetically sealed TO66
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
24.13
(0.95)
24.63
(0.97)
14.48
(0.570)
14.99
(0.590)
3.68
(0.145) rad.
max.
3.61 (0.142)
4.08(0.161)
rad.
0.71
(0.028)
0.86
(0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94
(0.470)
12.70
(0.500)
1
2
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6488BV | 15 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2N6491BD | 15 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2N6488AK | 15 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2N6491DW | 15 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2N6490AN | 15 A, 60 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6426 | 功能描述:达林顿晶体管 NPN Darl Amp RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6426/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Darlington Transistors NPN |
| 2N6426_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:NPN Darlington Transistor |
| 2N6426_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Darlington Transistors NPN Silicon |
| 2N6426_D26Z | 功能描述:达林顿晶体管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。