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参数资料
| 型号： | 2N6438 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 25 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 131K |
| 代理商： | 2N6438 |
1
Motorola Bipolar Power Transistor Device Data
High-Power PNP Silicon
Transistors
. . . designed for use in industrial–military power amplifier and switching circuit
applications.
High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min) — 2N6437
VCEO(sus) = 120 Vdc (Min) — 2N6438
High DC Current Gain —
hFE = 20–80 @IC = 10 Adc
hFE = 12 (Min) @ IC = 25 Adc
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
Fast Switching Times @ IC = 10 Adc
tr = 0.3 s (Max)
ts = 1.0 s (Max)
tf = 0.25 s (Max)
Complement to NPN 2N6339 thru 2N6341
MAXIMUM RATINGS (1)
Rating
Symbol
2N6437
2N6438
Unit
Collector–Base Voltage
VCB
120
140
Vdc
Collector–Emitter Voltage
VCEO
100
120
Vdc
Emitter–Base Voltage
VEB
6.0
Vdc
Collector Current — Continuous
Peak
IC
25
50
Adc
Base Current
IB
10
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
200
1.14
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ,Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
0.875
_C/W
(1) Indicates JEDEC Registered Data.
200
50
0
25
50
75
100
125
150
175
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
150
125
100
175
75
25
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6437/D
Motorola, Inc. 1998
2N6437
2N6438
*Motorola Preferred Device
25 AMPERE
POWER TRANSISTORS
PNP SILICON
100, 120 VOLTS
200 WATTS
*
CASE 1–07
TO–204AA
(TO–3)
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| 2N6109-6265 | 7 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6438JANTX | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 120V 25A 3-Pin(2+Tab) TO-3 |
| 2N6439 | 功能描述:射频双极电源晶体管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray |
| 2N6439MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| 2N6441 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS |
| 2N6442 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS |
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