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参数资料
| 型号： | 2N6454 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72 |
| 文件页数： | 1/1页 |
| 文件大小： | 93K |
| 代理商： | 2N6454 |
01/99
2N6453, 2N6454
N-Channel Silicon Junction Field-Effect Transistor
Audio Amplifiers
Low-Noise, High Gain
Amplifiers
Low-Noise Preamplifiers
Absolute maximum ratings at TA = 25C
2N6453
2N6454
Reverse Gate Source Voltage
– 20 V
– 25 V
Reverse Gate Drain Voltage
– 20 V
– 25 V
Continuous Forward Gate Current
10 mA
Continuous Device Power Dissipation
360 mW
Power Derating
2.88 mW/°C 2.88 mW/°C
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
At 25°C free air temperature:
2N6453
2N6454
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
– 20
– 25
V
IG = – 1 A, VDS = V
– 0.1
nA
VGS = – 10V, VDS = V
Gate Reverse Current
IGSS
– 0.5
nA
VGS = – 15V, VDS = V
– 0.2
A
VGS = – 10V, VDS = V
TA = 125°C
– 1
A
VGS = – 15V, VDS = V
TA = 125°C
Gate Source Cutoff Voltage
VGS(OFF)
– 0.75 – 5 – 0.75 – 5
V
VDS = 10V, ID = 0.5 nA
Drain Saturation Current (Pulsed)
IDSS
15
50
15
50
mA
VDS = 10V, VGS = V
Dynamic Electrical Characteristics
Common Source
| Yfs |
mS
VDS = 10V, ID = 5 mA
f = 1 kHz
Forward Transmittance
20
40
20
40
mS
VDS = 10V, ID = 15 mA
f = 1 kHz
Common Source
| Yos |
S
VDS = 10V, ID = 5 mA
f = 1 kHz
Output Conductance
100
S
VDS = 10V, ID = 15 mA
f = 1 kHz
Common Source
Ciss
pF
VDS = 10V, ID = 5 mA
f = 1 kHz
Input Capacitance
25
pF
VDS = 10V, ID = 15 mA
f = 1 kHz
Common Source Reverse
Crss
pF
VDS = 10V, ID = 5 mA
f = 1 kHz
Transfer Capacitance
55
pF
VDS = 10V, ID = 15 mA
f = 1 kHz
Equivalent Short Circuit
eN
5
10 nV/
√Hz V
DS = 10 V, ID = 5 mA
f = 10 kHz
Input Noise Voltage
3
8
nV/
√Hz V
DS = 10 V, ID = 5 mA
f = 1 kHz
Noise Figure
NF
1.5
2.5
dB
VDS = 10V, ID = 5 mA
f = 10 Hz
RG = 10 k
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Databook.fxp
1/13/99 2:09 PM
Page B-26
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6454 | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72 |
| 2N6453 | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72 |
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| 2N6465R1 | 4 A, 110 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6461 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
| 2N6462 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device |
| 2N6463 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
| 2N6464 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device |
| 2N6465 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 4A 2PIN TO-66 - Bulk |
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