- 您现在的位置：买卖IC网 > PDF目录33285 > 2N6490 (MOTOROLA INC) 15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB PDF资料下载
参数资料
| 型号： | 2N6490 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | PLASTIC, CASE 221A-06, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 151K |
| 代理商： | 2N6490 |
1
Motorola Bipolar Power Transistor Device Data
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general–purpose amplifier and switching applications.
DC Current Gain Specified to 15 Amperes —
hFE = 20–150 @ IC = 5.0 Adc
hFE = 5.0 (Min) @ IC = 15 Adc
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 60 Vdc (Min) – 2N6487, 2N6490
VCEO(sus) = 80 Vdc (Min) – 2N6488, 2N6491
High Current Gain — Bandwidth Product
fT = 5.0 MHz (Min) @ IC = 1.0 Adc
TO–220AB Compact Package
MAXIMUM RATINGS (1)
Rating
Symbol
2N6487
2N6490
2N6488
2N6491
Unit
Collector–Emitter Voltage
VCEO
60
80
Vdc
Collector–Base Voltage
VCB
70
90
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
IC
15
Adc
Base Current
IB
5.0
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
75
0.6
Watts
W/
_C
Total Power Dissipation @ TA = 25_C
Derate above 25
_C
PD
1.8
0.014
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.67
_C/W
Thermal Resistance, Junction to Ambient
R
θJA
70
_C/W
(1) Indicates JEDEC Registered Data.
80
40
20
0
20
40
80
100
120
160
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
60
TA TC
4.0
2.0
1.0
3.0
0
60
140
TA
TC
0
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6487/D
Motorola, Inc. 1995
2N6487
2N6488
2N6490
2N6491
*Motorola Preferred Device
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 – 80 VOLTS
75 WATTS
*
CASE 221A–06
TO–220AB
NPN
PNP
REV 7
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6488 | 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2N6491 | 15 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2N6498WD | 5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2N6045D1 | 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2N6498AJ | 5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N649093 | 制造商:Harris Corporation 功能描述: |
| 2N6490G | 功能描述:两极晶体管 - BJT 15A 60V 75W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6491 | 功能描述:两极晶体管 - BJT PNP Med Power RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N649104 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| 2N6491G | 功能描述:两极晶体管 - BJT 15A 80V 75W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。