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参数资料
| 型号： | 2N6491BD |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 12/61页 |
| 文件大小： | 367K |
| 代理商： | 2N6491BD |
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2N6487 2N6488 2N6490 2N6491
3–133
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
2N6487, 2N6490
2N6488, 2N6491
VCEO(sus)
60
80
—
Vdc
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, VBE = 1.5 Vdc)
2N6487, 2N6490
2N6488, 2N6491
VCEX
70
90
—
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
2N6487, 2N6490
(VCE = 40 Vdc, IB = 0)
2N6488, 2N6491
ICEO
—
1.0
mAdc
Collector Cutoff Current
(VCE = 65 Vdc, VEB(off) = 1.5 Vdc)
2N6487, 2N6490
(VCE = 85 Vdc, VEB(off) = 1.5 Vdc)
2N6488, 2N6491
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6487, 2N6490
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6488, 2N6491
ICEX
—
500
5.0
Adc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
—
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 15 Adc, VCE = 4.0 Vdc)
hFE
20
5.0
150
—
—
Collector–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.5 Adc)
(IC = 15 Adc, IB = 5.0 Adc)
VCE(sat)
—
1.3
3.5
Vdc
Base–Emitter On Voltage
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 15 Adc, VCE = 4.0 Vdc)
VBE(on)
—
1.3
3.5
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz)
fT
5.0
—
MHz
Small–Signal Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
25
—
—
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
(2) fT = |hfe| ftest.
Figure 2. Switching Time Test Circuit
1000
Figure 3. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
t,TIME
(ns)
500
50
20
0.2
20
TC = 25°C
VCC = 30 V
IC/IB = 10
10
1.0
5.0
tr
0.5
2.0
10
200
100
td @ VBE(off) [ 5.0 V
NPN
PNP
+ 10 V
0
SCOPE
RB
– 4 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25
s
– 10 V
D1
51
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
FOR PNP, REVERSE ALL POLARITIES.
VCC
+ 30 V
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6488AK | 15 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2N6491DW | 15 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2N6490AN | 15 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2N6488BU | 15 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2N6490AK | 15 A, 60 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6491G | 功能描述:两极晶体管 - BJT 15A 80V 75W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6492 | 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2N6493 | 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2N6494 | 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2N6495 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 10A 2PIN TO-66 - Bulk |
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