参数资料
型号: 2N6515ZL1
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 500 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: CASE 29-04, TO-226AA, 3 PIN
文件页数: 4/6页
文件大小: 180K
代理商: 2N6515ZL1
NPN 2N6515 2N6517 PNP 2N6520
http://onsemi.com
100
Figure 6. “On” Voltages – NPN 2N6515, 2N6517
Figure 7. “On” Voltages – PNP 2N6520
Figure 8. Temperature Coefficients – NPN 2N6515,
2N6517
Figure 9. Temperature Coefficients – PNP 2N6520
IC, COLLECTOR CURRENT (mA)
100
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70
V,
VOL
TAGE
(VOL
TS)
1.4
1.2
0
0.6
0.8
1.0
NPN
IC, COLLECTOR CURRENT (mA)
-100
-1.0
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
-50 -70
IC, COLLECTOR CURRENT (mA)
100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70
2.5
IC, COLLECTOR CURRENT (mA)
-100
-1.0
-2.0 -3.0 -5.0 -7.0 -10
-20 -30 -50 -70
Figure 10. Capacitance – NPN 2N6515, 2N6517
VR, REVERSE VOLTAGE (VOLTS)
200
0.2
0.5
1.0
2.0
5.0
10
20
50 100
100
2.0
3.0
5.0
70
VR, REVERSE VOLTAGE (VOLTS)
C,
CAP
ACIT
ANCE
(pF)
1.0
V,
VOL
TAGE
(VOL
TS)
0.4
0.2
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 5.0
-1.4
-1.2
0
-0.6
-0.8
-1.0
-0.4
-0.2
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = -10 V
VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 5.0
R
V,
TEMPERA
TURE
COEFFICIENTS
(mV/
C)°
θ
R
V,
TEMPERA
TURE
COEFFICIENTS
(mV/
C)°
θ
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
RθVC for VCE(sat)
RθVB for VBE
25°C to 125°C
-55°C to 25°C
-55°C to 125°C
IC
IB
+ 10
RθVC for VCE(sat)
RθVB for VBE
25°C to 125°C
-55°C to 25°C
-55°C to 125°C
IC
IB
+ 10
C,
CAP
ACIT
ANCE
(pF)
7.0
10
20
30
50
-200
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100
TJ = 25°C
Ccb
Ceb
Ccb
Ceb
2.5
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
100
2.0
3.0
5.0
70
1.0
7.0
10
20
30
50
Figure 11. Capacitance – PNP 2N6520
相关PDF资料
PDF描述
2N6520RL 500 mA, 350 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N6520RLRE 500 mA, 350 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N6520ZL1 500 mA, 350 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1370C 100 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226
2SA1370D 100 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226
相关代理商/技术参数
参数描述
2N6516 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:Small Signal Transistors
2N6516BU 功能描述:两极晶体管 - BJT TO-92 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N6516TA 功能描述:两极晶体管 - BJT TO-92 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N6517 功能描述:两极晶体管 - BJT 500mA 350V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N6517 -AP 制造商:Micro Commercial Components (MCC) 功能描述:Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 Ammo