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参数资料
| 型号： | 2N6518BU |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 250 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 1/4页 |
| 文件大小： | 56K |
| 代理商： | 2N6518BU |
2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
2N65
18
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a=25°C unless otherwise noted
Refer to 2N6520 for graphs
Electrical Characteristics T
a=25°C unless otherwise noted
* Pulse Test: Pulse Width
≤300s, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-250
V
VCEO
Collector-Emitter Voltage
-250
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-500
mA
IB
Base Current
-250
mA
PC
Collector Power Dissipation
625
mW
Derate above 25
°C5
mW/
°C
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
BVCBO
* Collector-Base Breakdown Voltage
IC= -100A, IE=0
-250
V
BVCEO
Collector-Emitter Breakdown Voltage
IC= -1mA, IB=0
-250
V
BVEBO
Emitter-Base Breakdown Voltage
IE= -10A, IC=0
-5
V
ICBO
Collector Cut-off Current
VCB= -150V, IE=0
-50
nA
IEBO
Emitter Cut-off Current
VEB= -4V, IC=0
-50
nA
hFE
* DC Current Gain
VCE= -10V, IC= -1mA
VCE= -10V, IC= -10mA
VCE= -10V, IC= -30mA
VCE= -10V, IC= -50mA
VCE= -10V, IC= -100mA
35
50
45
25
300
220
VCE (sat)
Collector-Emitter Saturation Voltage
IC= -10mA, IB= -1mA
IC= -20mA, IB= -2mA
IC= -30mA, IB= -3mA
IC= -50mA, IB= -5mA
-0.30
-0.35
-0.50
-1
V
VBE (sat)
Base-Emitter Saturation Voltage
IC= -10mA, IB= -1mA
IC= -20mA, IB= -2mA
IC= -30mA, IB= -3mA
-0.75
-0.85
-0.90
V
VBE (on)
Base-Emitter On Voltage
VCE= -10V, IC= -100mA
-2
V
fT
* Current Gain Bandwidth Product
VCE= -20V, IC= -10mA, f=20MHz
40
200
MHz
Cob
Output Capacitance
VCB= -20V, IE=0, f=1MHz
6
pF
CEB
Emitter-Base Capacitance
VEB= -0.5V, IC=0, f=1MHz
100
pF
tON
Turn On Time
VBE (off)= -2V, VCC= -100V
IC= -50mA, IB1= -10mA
200
ns
tOFF
Turn Off Time
VCC= -100V, IC= -50mA
IB1=IB2=10mA
3.5
ns
2N6518
High Voltage Transistor
Collector-Emitter Voltage: VCEO= -250V
Collector Dissipation: PC (max)=625mW
Complement to 2N6515
1. Emitter 2. Base 3. Collector
TO-92
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6518TA | 功能描述:两极晶体管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6518TA_Q | 功能描述:两极晶体管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6519 | 制造商:n/a 功能描述:2N6519 TO92 N9H1C |
| 2N6519BU | 功能描述:两极晶体管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6519RLRA | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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