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参数资料
| 型号： | 2N6519D26Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 1/2页 |
| 文件大小： | 33K |
| 代理商： | 2N6519D26Z |
2N6519
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25
°°C)
Refer to 2N6520 for graphs
ELECTRICAL CHARACTERISTICS (TA=25
°°C)
* Pulse Test: Pulse Width
≤300s, Duty Cycle≤2%
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Derate above 25
°C
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
-300
-5
-500
-250
0.625
5
150
-55 ~ 150
V
mA
W
mW/
°C
Characteristic
Symbol
Test Conditions
Min
Max
Unit
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base Emitter On Voltage
* Current Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Turn On Time
Turn Off Time
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
VBE (sat)
VBE (on)
fT
CCB
CEB
TON
TOFF
IC= -100
A, I
E=0
IC= -1mA, IB=0
IE= -10
A, I
C=0
VCB= -200V, IE=0
VEB= -4V, IC=0
VCE= -10V, IC= -1mA
VCE= -10V, IC= -10mA
VCE= -10V, IC= -30mA
VCE= -10V, IC= -50mA
VCE= -10V, IC= -100mA
IC= -10mA, IB= -1mA
IC= -20mA, IB= -2mA
IC= -30mA, IB= -3mA
IC= -50mA, IB= -5mA
IC= -10mA, IB= -1mA
IC= -20mA, IB= -2mA
IC= -30mA, IB= -3mA
VCE= -10V, IC= -100mA
VCE= -20V, IC= -10mA
VCB= -20V, IE=0, f=1MHz
VEB= -0.5V, IC=0, f=1MHz
VBE (off)= -2V, VCC= -100V
IC= -50mA, IB1= -10mA
VCC= -100V, IC= -50mA
IB1=IB2=10mA
-300
-5
30
45
40
20
40
-50
270
200
-0.30
-0.35
-0.50
-1
-0.75
-0.85
-0.90
-2
200
6
100
200
3.5
V
nA
V
MHz
pF
ns
TO-92
1.Emitter 2. Base 3. Collector
1999 Fairchild Semiconductor Corporation
Rev. B
相关PDF资料 |
PDF描述 |
|---|---|
| 2N651A | 500 mA, 30 V, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N6520-BP | 500 mA, 350 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N6519-BP | 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N6520RLRB | 500 mA, 350 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N6517RL1 | 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6519RLRA | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| 2N6519TA | 功能描述:两极晶体管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6519TA_Q | 功能描述:两极晶体管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N651A | 制造商: 功能描述: 制造商:Motorola Inc 功能描述: 制造商:undefined 功能描述: |
| 2N651AJ | 制造商:Motorola Inc 功能描述: |
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