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参数资料
| 型号： | 2N6520 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 350 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| 文件页数： | 1/1页 |
| 文件大小： | 27K |
| 代理商： | 2N6520 |
PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
* 350 Volt VCEO
* Gain of 15 at IC=-100mA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-350
V
Collector-Emitter Voltage
VCEO
-350
V
Emitter-Base Voltage
VEBO
-5
V
Base Current
IB
-250
mA
Continuous Collector Current
IC
-500
mA
Power Dissipation at Tamb= 25°C
Ptot
680
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-350
V
IC=-100A, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-350
V
IC=-1mA, IB=0*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-5
V
IE=-10A, IC=0
Collector Cut-Off Current
ICBO
-50
nA
VCB=-250V, IE=0
Emitter Cut-Off Current
IEBO
-50
nA
VEB=-4V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.3
-0.35
-0.5
-1.0
V
IC=-10mA, IB=-1mA*
IC=-20mA, IB=-2mA*
IC=-30mA, IB=-3mA*
IC=-50mA, IB=-5mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-0.80
-0.85
-0.90
V
IC=-10mA, IB=-1mA*
IC=-20mA, IB=-2mA*
IC=-30mA, IB=-3mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-2.0
V
IC=-100mA, VCE=-10V*
Static Forward Current
Transfer Ratio
hFE
20
30
20
15
200
IC=-1mA, VCE=-10V
IC=-10mA, VCE=-10V*
IC=-30mA, VCE=-10V*
IC=-50mA, VCE=-10V*
IC=-100mA, VCE=-10V*
Transition Frequency
fT
40
MHz
IC=-10mA, VCE=-20V,
f=20MHz
*Measured under pulsed conditions. Pulse width=300s. Duty cycle ≤2%
E-Line
TO92 Compatible
2N6520
3-4
C
B
E
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6520-AP | 制造商:Micro Commercial Components (MCC) 功能描述:Trans GP BJT PNP 350V 0.5A 3-Pin TO-92 Ammo |
| 2N6520BU | 功能描述:两极晶体管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6520RL1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| 2N6520RLRA | 功能描述:两极晶体管 - BJT 500mA 350V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6520RLRAG | 功能描述:两极晶体管 - BJT 500mA 350V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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