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参数资料
| 型号： | 2N652A |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 30 V, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封装： | TO-5, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 240K |
| 代理商： | 2N652A |
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2N652A Information
Category Transistors
2N652A Specifications
Military/High-Rel : N
V(BR)CEO (V) : 30г
V(BR)CBO (V) : 45
I(C) Max. (A) : 500m
Absolute Max. Power Diss. (W) : 200m
Maxim um Operating Tem p (шC) : 100ю
I(CBO) Max. (A) : 10u
@V(CBO) (V) (Test Condition) : 30
h(FE) Min. Current gain. : 80
h(FE) Max. Current gain. :
@I(C) (A) (Test Condition) : 1.0m
@V(CE) (V) (Test Condition) : 6.0
h(fe) Min. SS Current gain. : 100
@I(C) (A) (Test Condition) : 1.0m
@V(CE) (V) (Test Condition) : 6.0
@Freq. (Hz) (Test Condition) : 1.0k
f(T) Min. (Hz) Transition Freq : 1.2M
@I(C) (A) (Test Condition) : 1.0m
@V(CE) (V) (Test Condition) : 6.0
C(obo) (Max) (F) : 25p
@V(CB) (V) (Test Condition) : 6.0
@Freq. (Hz) (Test Condition) :
Package Style : TO-5
Mounting Style : T
Description :
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