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参数资料
| 型号： | 2N6544LEADFREE |
| 厂商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 463K |
| 代理商： | 2N6544LEADFREE |
2N6544
2N6545
NPN SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6544, 2N6545
types are Silicon NPN Triple Diffused Mesa Transistors
designed for high voltage, high current, high speed
switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C)
SYMBOL
2N6544
2N6545
UNITS
Collector-Emitter Voltage
VCEV
650
850
V
Collector-Emitter Voltage
VCEX
350
450
V
Collector-Emitter Voltage
VCEO
300
400
V
Emitter-Base Voltage
VEBO
9.0
V
Continuous Collector Current
IC
8.0
A
Peak Collector Current
ICM
16
A
Continuous Emitter Current
IE
16
A
Peak Emitter Current
IEM
32
A
Continuous Base Current
IB
8.0
A
Peak Base Current
IBM
16
A
Power Dissipation
PD
125
W
Power Dissipation, TC=100°C
PD
71.5
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +200
°C
Thermal Resistance
ΘJC
1.4
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N6544
2N6545
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
ICEV
VCE=Rated VCEV, VBE=1.5V
-
0.5
-
0.5
mA
ICEV
VCE=Rated VCEV, VBE=1.5V, TC=100°C
-
2.5
-
2.5
mA
ICER
VCE=Rated VCEV, RBE=50Ω, TC=100°C
-
3.0
-
3.0
mA
IEBO
VEB=9.0V
-
1.0
-
1.0
mA
BVCEX
VCL=Rated VCEX, IC=4.5A, TC=100°C
350
-
450
-
V
BVCEX
VCL=Rated VCEO-100V, IC=8.0A, TC=100°C
200
-
300
-
V
BVCEO
IC=100mA
300
-
400
-
V
VCE(SAT) IC=5.0A, IB=1.0A
-
1.5
-
1.5
V
VCE(SAT) IC=8.0A, IB=2.0A
-
5.0
-
5.0
V
VCE(SAT) IC=5.0A, IB=1.0A, TC=100°C
-
2.5
-
2.5
V
VBE(SAT)
IC=5.0A, IB=1.0A
-
1.6
-
1.6
V
VBE(SAT)
IC=5.0A, IB=1.0A, TC=100°C
-
1.6
-
1.6
V
hFE
VCE=3.0V, IC=2.5A
12
60
12
60
hFE
VCE=3.0V, IC=5.0A
7.0
35
7.0
35
TO-3 CASE
R1 (7-February 2011)
www.centr a lsemi.com
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PDF描述 |
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| 2N6547-JQR-A | 15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
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| 2N6547-JQRR1 | 15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N6547R1 | 15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6545 | 功能描述:两极晶体管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6546 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 15A 3PIN TO-3 - Bulk |
| 2N6546JANTX | 制造商:Microsemi Corporation 功能描述: |
| 2N6547 | 功能描述:两极晶体管 - BJT NPN Power Switching RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6547 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-3 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-3 |
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