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参数资料
| 型号： | 2N6547 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 182K |
| 代理商： | 2N6547 |
2N6547
4
Motorola Bipolar Power Transistor Device Data
MAXIMUM RATED SAFE OPERATING AREAS
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
BONDING WIRE LIMITED
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
50
Figure 7. Forward Bias Safe Operating Area
5.0
10
20
400
TC = 25°C
0.2
10
0.5
20
70
1.0
0.005
dc
5.0
100
7.0
2N6546
2N6547
CURVES APPLY BELOW RATED VCEO
5.0 ms
1.0 ms
100
s
I C
,COLLECT
OR
CURRENT
(AMP)
0.1
0.01
30
50
300
200
0.02
0.05
2.0
10 ms
TURN OFF LOAD LINE
BOUNDARY FOR 2N6547.
FOR 2N6546, VCEO AND
VCEX ARE 100 VOLTS LESS.
20
Figure 8. Reverse Bias Safe Operating Area
100
500
VCEX(sus)
8.0
16
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
12
0
400
VCEO(sus)
VCEX(sus)
8.0 V
I C
,COLLECT
OR
CURRENT
(AMP)
4.0
300
200
VBE(off) v 5 V
TC v 100°C
100
80
60
20
0
40
80
120
160
200
Figure 9. Power Derating
TC, CASE TEMPERATURE (°C)
POWER
DERA
TING
F
ACT
OR
(%)
THERMAL DERATING
40
SECOND BREAKDOWN
DERATING
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 7 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 7 may be found at any case tem-
perature by using the appropriate curve on Figure 9.
TJ(pk) may be calculated from the data in Figure 10. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
Figure 10. Thermal Response
t, TIME (ms)
1.0
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1.0 k
500
Z
θJC (t) = r(t) RθJC
R
θJC = 1.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) Z
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
r(t),
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6547 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-3 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-3 |
| 2N6547/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Switchmode Series NPN Silicon Power Transistors |
| 2N6548 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:NPN SILICON DARLINGTON TRANSISTORS |
| 2N6548N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 2A I(C) | TO-202VAR |
| 2N6549 | 功能描述:达林顿晶体管 NPN 40V 2A RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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