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参数资料
| 型号： | 2N6578R1 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 17K |
| 代理商： | 2N6578R1 |
2N6578
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 5560
Issue 1
NPN BIPOLAR
POWER DARLINGTON
TRANSISTOR
FEATURES
FAST SWITCHING
CECC SCREENING OPTIONS
SPACE QUALITY LEVELS OPTIONS
JAN LEVEL SCREENING OPTIONS
VCBO
Collector – Base Voltage (IE = 0)
VCEO
Collector – Emitter Voltage (IB = 0)
VEBO
Emitter – Base Voltage (IC = 0)
IB
Base Current
IC
Collector Current
PD
Power Dissipation @ TC = 25°C
RθJC
Thermal Resistance Junction to Case
TJ , TSTG
Operating and Storage Junction Temperature Range
120V
7V
250mA
15A
120W
1.46°C/W
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
TO-3 (TO-204AA)
ABSOLUTE MAXIMUM RATINGS (T
c = 25°C unless otherwise stated)
Underside View
1 = Emitter
2 = Base
3 = Collector
12
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.
61
(
1
.52)
39.
12
(
1
.54)
29.
9
(
1
.177)
30.
4
(
1
.197)
16.
64
(
0
.655)
17.
15
(
0
.675)
3.84 (0.151)
4.09 (0.161)
0.
97
(
0
.060)
1.
10
(
0
.043)
7.92 (0.312)
12.70 (0.50)
22.
23
(0
.875)
ma
x
.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
APPLICATIONS
HIGH SPEED SWITCHING CIRCUITS
POWER AMPLIFIERS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6579 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 350V 12A 3PIN TO-3 - Bulk |
| 2N657A | 功能描述:两极晶体管 - BJT Small Signal Transistor Gen Purp RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N658 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5 |
| 2N6580 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 400V 10A 3PIN TO-3 - Bulk |
| 2N6581 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 450V 10A 3PIN TO-3 - Bulk |
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