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参数资料
| 型号： | 2N6659 |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 35 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 |
| 封装： | TO-39, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 238K |
| 代理商： | 2N6659 |
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2N6659 Information
Category Transistors
Class MOSFETs and TempFETs
2N6659 Specifications
Military/High-Rel : N
V(BR)DSS (V) : 35
V(BR)GSS (V) : 30
I(D) Max. (A) : 2.0
I(DM) Max. (A) Pulsed I(D) :
@Tem p (шC) :
IDM Max (@25шC Am b) :
@Pulse Width (s) (Condition) :
Absolute Max. Power Diss. (W) : 6.25
Minim um Operating Tem p (шC) :
Maxim um Operating Tem p (шC) : 150х
Therm al Resistance Junc-Case :
Therm al Resistance Junc-Am b. :
V(GS)th Max. (V) :
V(GS)th (V) (Min) :
@(VDS) (V) (Test Condition) :
@I(D) (A) (Test Condition) :
I(DSS) Max. (A) :
@V(DS) (V) (Test Condition) :
@Tem p (шC) (Test Condition) :
I(GSS) Max. (A) : 100n
@V(GS) (V) (Test Condition) :
r(DS)on Max. (Ohm s) : 1.8
@V(GS) (V) (Test Condition) :
@I(D) (A) (Test Condition) :
g(fs) Min. (S) Trans. conduct. : 170m
g(fs) Max; (S) Trans. conduct; : 195mВ
@V(DS) (V) (Test Condition) : 25
@I(D) (A) (Test Condition) : 500m
C(iss) Max. (F) : 50p
@V(DS) (V) (Test Condition) :
@V(GS) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
td(on) Max (s) On tim e delay :
t(r) Max. (s) Rise tim e : 5.0n
t(d)off Max. (s) Off tim e :
t(f) Max. (s) Fall tim e. : 5.0n
Package Style : TO-39
Mounting Style : T
Description :
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相关PDF资料 |
PDF描述 |
|---|---|
| 2N6659 | 1400 mA, 35 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39 |
| 2N6660 | 1100 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39 |
| 2N6661-JQR-BR1 | 900 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 2N6661-JQR-B | 900 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 2N6661-JQR-A | 900 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6659-2 | 制造商:Vishay Siliconix 功能描述:N-CH MOSFET TO-39 35V 1.8 OHM (JANTX SIMILAR) - Bulk |
| 2N6659-E3 | 功能描述:MOSFET 35V 1.8 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N6660 | 功能描述:MOSFET 60V 3Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N6660 | 制造商:SOLID STATE 功能描述:MOSFET, N CH, 60V, 1.7A, TO-39 |
| 2N6660_07 | 制造商:SUPERTEX 制造商全称:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
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