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参数资料
| 型号： | 2N6661CSM4-JQR-BG4 |
| 厂商： | SEMELAB LTD |
| 元件分类： | JFETs |
| 英文描述： | 0.9 A, 90 V, 5.3 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-041BA |
| 封装： | LCC3-4 |
| 文件页数： | 2/2页 |
| 文件大小： | 86K |
| 代理商： | 2N6661CSM4-JQR-BG4 |
2N6661CSM4
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both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
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E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 3779, ISSUE 3
STATIC ELECTRICAL RATINGS (T
case=25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ.
Max.
Unit
V
(BR)DSS
Drain – Source Breakdown Voltage
V
GS = 0V
I
D = 1.0A
90
-
V
DS = VGS
I
D = 1.0mA
0.8
-
2
T
C = 125°C
0.3
-
V
GS(th)
Gate – Source threshold Voltage
T
C = -55°C
-
2.5
V
GS = ±20V
V
DS = 0V
-
±100
I
GSS
Gate – Source Leakage Current
T
C = 125°C
-
±500
nA
V
DS = 72V
V
GS = 0V
-
1.0
I
DSS
Zero Gate Voltage Drain Current
T
C = 125°C
-
100
A
I
D(on)
On – State Drain Current (note 2)
V
DS = 15V
V
GS = 10V
1.5
-
A
V
GS = 5V
I
D = 0.3A
-
5.3
V
GS = 10V
I
D = 1.0A
-
4
R
DS(on)
Drain – Source On Resistance
(note 3)
T
C = 125°C
-
7.5
V
GS = 5V
I
D = 0.3A
-
1.6
V
GS = 10V
I
D = 1.0A
-
4
V
DS(on)
Drain – Source On Voltage (note 2)
T
C = 125°C
-
7.5
V
g
FS
Forward Transconductance (Note 2)
V
DS = 7.5V
I
D = 0.475A
170
-
ms
V
SD
Diode Forward Voltage (Note 2)
V
GS = 0V
I
s = 0.86A
0.7
-
1.4
V
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
-
50
C
oss
Output Capacitance
-
40
C
rss
Reverse Transfer Capacitance
V
DS = 25V
f = 1.0MHz
V
GS = 0V
-
10
pF
T
d(on)
Turn-On Delay
-
10
T
d(off)
Turn-Off Delay Time
V
DD = 25V
R
GS = 50
I
D = 1A
(Note 2)
-
10
ns
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6661DCSM | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:DUAL N–CHANNEL ENHANCEMENT MODE |
| 2N6661-E3 | 功能描述:MOSFET 90V 0.9A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N6661-E3/ | 制造商:Vishay Siliconix 功能描述:MOSFET |
| 2N6661JAN02 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 90V 0.86A 3-Pin TO-205AD 制造商:Vishay Siliconix 功能描述:N-CH MOSFET TO-39 90V 4 OHM (MOTS) - Bulk |
| 2N6661JANTX | 制造商:Vishay Semiconductors 功能描述: |
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