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参数资料
| 型号： | 2N6667 |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 263K |
| 代理商： | 2N6667 |
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2N6667 Information
Category Transistors
Class Darlington Transistors
Type PNP
2N6667 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 60
V(BR)CBO (V) : 60
I(C) Max. (A) : 10
Absolute Max. Power Diss. (W) : 26
Maximum Operating Temp (шC) : 150х
I(CBO) Max. (A) : 3.0m
@V(CBO) (V) (Test Condition) :
h(FE) Min. Current gain. : 1.0k
h(FE) Max. Current gain. : 20k
@I(C) (A) (Test Condition) : 5.0
@V(CE) (V) (Test Condition) : 3.0
f(T) Min. (Hz) Transition Freq : 20M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
t(d) Max. (s) Delay time. :
t(r) Max. (s) Rise time :
t(on) Max. (s) On time. :
t(s) Max. (s) Storage time. :
t(f) Max. (s) Fall time. :
t(off) Max. (s) Off time :
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2N6667 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio...
http://www.americanmicrosemi.com/information/spec/?ss_pn=2N6667
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11/7/2009 2:17 AM
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6668-6255 | 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2N6667-6255 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2N6667-6261 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2N6667-6258 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2N6666-6226 | 8 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6667_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W |
| 2N6667_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Darlington Silicon Power Transistors |
| 2N6667G | 功能描述:达林顿晶体管 10A 60V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6668 | 功能描述:两极晶体管 - BJT PNP Pwr Darlington RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6668 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-220 |
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