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参数资料
| 型号： | 2N6732 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| 文件页数： | 1/1页 |
| 文件大小： | 35K |
| 代理商： | 2N6732 |
PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
* 80 Volt VCEO
* Gain of 100 at IC = 350 mA
*Ptot=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-100
V
Collector-Emitter Voltage
VCEO
-80
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Power Dissipation at Tamb= 25°C
Ptot
1W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-100
V
IC=-100A, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-80
V
IC=-10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
IE=-1mA, IC=0
Collector Cut-Off
Current
ICBO
-0.1
A
VCB=-80V, IE=0
Emitter Cut-Off Current IEBO
-10
A
VEB=-5V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.35
V
IC=-350mA, IB=-35mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-1.0
V
IC=-350mA, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
100
300
IC=-10mA, VCE=-2V*
IC=-350mA, VCE=-2V*
Transition
Frequency
fT
50
500
MHz
IC=-200mA, VCE=-5V
f=20MHz
Collector-Base
Capacitance
CCB
20
pF
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300s. Duty cycle ≤2%
E-Line
TO92 Compatible
2N6732
3-11
C
B
E
Not Recommended for New Design
Please Use ZTX753
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6732STOA | 功能描述:两极晶体管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6732STOB | 功能描述:两极晶体管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6732STZ | 功能描述:两极晶体管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6733 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:Power Transistors |
| 2N6734 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:Power Transistors |
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