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参数资料
| 型号： | 2N6760R1 |
| 厂商： | SEMELAB LTD |
| 元件分类： | JFETs |
| 英文描述： | 5.5 A, 400 V, 1.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 封装： | HERMETIC SEALED, METAL, TO-3, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 90K |
| 代理商： | 2N6760R1 |
N-CHANNEL
POWER MOSFET
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 9142
Issue 1
Page 1 of 3
IRF330 / 2N6760
Power MOSFET Transistor
In A Hermetic Metal TO-3 Package
High Input Impedance / RDS(on) < 1.0
Designed For Switching, Power Supply,
Motor Control and Amplifier Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
C = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
400V
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current
Tc = 25°C
5.5A
ID
Continuous Drain Current
Tc = 100°C
3.5A
IDM
Pulsed Drain Current
(1)
22A
PD
Total Power Dissipation at
Tc = 25°C
75W
Derate Above 25°C
0.6W/°C
EAS
Single Pulse Avalanche Energy
(2)
1.7mJ
IAR
Avalanche Current
(1)
5.5A
dv/dt
Peak Diode Recovery
(3)
4V/ns
TJ
Junction Temperature Range
-55 to +150°C
Tstg
Storage Temperature Range
-55 to +150°C
TL
Lead Temperature (1.6mm (0.063”) from case for 10sec)
300°C
THERMAL PROPERTIES
Symbols
Parameters
Max.
Units
RθJC
Thermal Resistance, Junction To Case
1.67
°C/W
INTERNAL PACKAGE INDUCTANCE
Symbols
Parameters
Typ.
Units
LS + LD
Total Inductance
6.1
nH
No
Notes
tes
(1)
Repetitive Rating: Pulse width limited by maximum junction temperature
(2)
@VDD = 50V, Peak IL = 5.5A, Starting TJ = 25°C
(3)
@ ISD ≤ 5.5A, di/dt ≤ 90A/s, VDD ≤ BVDSS, TJ ≤ 150°C, Suggested RG = 7.5
(4)
Pulse Width ≤ 300us, δ ≤ 2%
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6761 | 4 A, 450 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 2N6768 | 14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204 |
| 2N6764 | 38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204 |
| 2N6770 | 12 A, 500 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204 |
| 2N6782LCC4E4 | 3.5 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6760TXV | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| 2N6761 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| 2N6762 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 4.5A 3PIN TO-204AA - Bulk 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk 制造商:International Rectifier 功能描述:N CH MOSFET, 500V, 4.5A, TO-204AA; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No |
| 2N6762_1006 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:N-CHANNEL MOSFET |
| 2N6762JANTX | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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