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参数资料
| 型号： | 2N6770 |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | JFETs |
| 英文描述： | 12 A, 500 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 240K |
| 代理商： | 2N6770 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/543
T4-LDS-0044 Rev. 2 (101484)
Page 1 of 5
DEVICES
LEVELS
2N6770
2N6770T1
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain – Source Voltage
VDS
500
Vdc
Gate – Source Voltage
VGS
± 20
Vdc
Continuous Drain Current
TC = +25°C
ID1
12
Adc
Continuous Drain Current
TC = +100°C
ID2
7.75
Adc
Max. Power Dissipation
TC = +25°C
Ptl
150 (1)
W
Drain to Source On State Resistance
Rds(on)
0.4 (2)
Ω
Operating & Storage Temperature
Top, Tstg
-55 to +150
°C
Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 7.75A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc
V(BR)DSS
500
Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25mA
VDS ≥ VGS, ID = 0.25mA, Tj = +125°C
VDS ≥ VGS, ID = 0.25mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
Vdc
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
VGS = 0V, VDS = 400V
VGS = 0V, VDS = 500V, Tj = +125°C
VGS = 0V, VDS = 400V, Tj = +125°C
IDSS1
IDSS2
IDSS3
25
1.0
0.25
Adc
mAdc
Static Drain-Source On-State Resistance
VGS = 10V, ID2 = 7.75A pulsed
VGS = 10V, ID1 = 12A pulsed
Tj = +125°C
VGS = 10V, ID2 = 7.75A pulsed
rDS(on)1
rDS(on)2
rDS(on)3
0.4
0.5
0.88
Ω
Diode Forward Voltage
VGS = 0V, ID1 = 12A pulsed
VSD
1.7
Vdc
2N6770
TO-204AA (TO-3)
2N6770T1 (TO-254AA)
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6782-JQR-A | 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6782-QR-B | 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6782-JQR-B | 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6786TX | 1.25 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6786TXV | 1.25 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6770_10 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:N-CHANNEL MOSFET |
| 2N6770JANTX | 制造商:International Rectifier 功能描述: 制造商:Microsemi Corporation 功能描述: |
| 2N6770JANTXV | 制造商:SILX 功能描述:_ 制造商:Microsemi Corporation 功能描述: |
| 2N6770T1 | 制造商:Microsemi Corporation 功能描述:MOSFET N CH 500V 12A TO-254AA |
| 2N6771 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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