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参数资料
| 型号： | 2N6770 |
| 元件分类： | JFETs |
| 英文描述： | 12 A, 500 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204 |
| 封装： | HERMETIC SEALED, TO-204, 2 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 62K |
| 代理商： | 2N6770 |
Parameter
Min.
Typ.
Max.
Units
Test Conditions
BV
DSS
Drain-Source
200
V
GS = 0
V, I
D =1.0 mA,
Breakdown Voltage
R
DS(on)
Static Drain-to-Source
-
--
-
.085
V
GS = 1
0 V, I
D = 19 A
3
On-State Resistance
-
--
-
.090
V
GS = 1
0 V, I
D = 30 A
3
V
GS(th)
Gate Threshold Voltage
2.0
-
4.0
V
DS
= V
GS,
I
D = 250 A
I
DSS
Zero Gate Voltage Drain
-
--
-
25
A
V
DS = 160 V, VGS = 0V
Current
-
--
-
250
V
DS = 160 V, VGS = 0V, TJ = 125°C
I
GSS
Gate -to-Source Leakage Forward
-
--
-
100
nA
V
GS = 20 V
I
GSS
Gate -to-Source Leakage Reverse
-
--
-
-100
nA
V
GS = -20 V
Q
G(on)
On-state Gate Charge
55
-
115
nC
V
GS = 1
0 V, I
D = 30A
Q
GS
Gate-to-Source Charge
8
-
-22
nC
V
DS = 100V
Q
Gd
Gate-to-Drain (“Miller”) Charge
30
-
60
nC
See note 4
t
D(on)
Turn-On Delay Time
-
--
-
-35
ns
V
DD = 100 V, ID = 30A, RG =2.35
t
r
Rise Time
-
--
-
190
ns
See note 4
t
D(off)
Turn-Off Delay Time
-
--
-
170
ns
t
r
Fall Time
-
--
-
130
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Typ.
Max.
Units
Test Conditions
V
SD
Diode Forward Voltage
-
--
-
1.9
V
T
J
= 25°C, I
S
= 30 A
3,VGS = 0 V
t
r
Reverse Recovery Time
-
--
-
950
ns
T
J = 25°C, IF= 30 A,d
i/dt<100A/s
3
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
Test Conditions
R
thJC
Junction-to-Case
-
--
-
0.83
Mounting surface flat,
R
thCS
Case-to-sink
-
0.21
-
°C/W
smooth, and greased
R
thJA
Junction-to-Ambient
-
--
-
48
Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
@V
DD= 50 V, Starting TJ = 25°C, L = 100 H + 10%, RG = 25
, Peak I
L = 30 A
3. Pulse width < 300 s; Duty Cycle < 2%
4. See MIL-S-19500/543
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Parameter
JANTXV, JANTX, 2N6766
Units
I
D @
V
GS = 10V, TC = 25°C
Continuous Drain Current
30
A
I
D @
V
GS = 10V, TC = 100°C
Continuous Drain Current
19
A
I
DM
Pulsed Drain Current
1
120
A
P
D @
T
C = 25°C
Maximum Power Dissipation
150
W
Linear Derating Factor
1.2
W/°C
V
GS
Gate-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy
2
60
4
mJ
I
AR
Avalanche Current
1
30
4
A
TJ
Operating Junction
-55 to 150
°C
TSTG
Storage Temperature Range
Lead Temperature
300(.06 from case for 10 sec)
°C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (T
C = 25°C unless otherwise noted
2N6764, JANTX2N6764, JANTXV2N6764
2N6768, JANTX2N6768, JANTXV2N6768
2N6766, JANTX2N6766, JANTXV2N6766
2N6770, JANTX2N6770, JANTXV2N6770
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6782LCC4E4 | 3.5 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2N6782R1 | 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6782.MODR1 | 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6784 | 2.25 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6784TX | 2.25 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6770_10 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:N-CHANNEL MOSFET |
| 2N6770JANTX | 制造商:International Rectifier 功能描述: 制造商:Microsemi Corporation 功能描述: |
| 2N6770JANTXV | 制造商:SILX 功能描述:_ 制造商:Microsemi Corporation 功能描述: |
| 2N6770T1 | 制造商:Microsemi Corporation 功能描述:MOSFET N CH 500V 12A TO-254AA |
| 2N6771 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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