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参数资料
| 型号： | 2N6770PBF |
| 元件分类： | JFETs |
| 英文描述： | 12 A, 500 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204 |
| 封装： | HERMETIC SEALED, TO-204, 2 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 64K |
| 代理商： | 2N6770PBF |
Parameter
Min.
Typ.
Max.
Units
Test Conditions
BV
DSS
Drain-Source
400
V
GS = 0
V, I
D =1.0 mA,
Breakdown Voltage
R
DS(on)
Static Drain-to-Source
-
--
-
.300
V
GS = 1
0 V, I
D = 9.0 A
3
On-State Resistance
-
--
-
.400
V
GS = 1
0 V, I
D = 14 A
3
V
GS(th)
Gate Threshold Voltage
2.0
-
4.0
V
DS
= V
GS,
I
D = 250 A
I
DSS
Zero Gate Voltage Drain
-
--
-
25
A
V
DS = 320 V, VGS = 0V
Current
-
--
-
250
V
DS = 320 V, VGS = 0V, TJ = 125°C
I
GSS
Gate -to-Source Leakage Forward
-
--
-
100
nA
V
GS = 20 V
I
GSS
Gate -to-Source Leakage Reverse
-
--
-
-100
nA
V
GS = -20 V
Q
G(on)
On-state Gate Charge
52
-
110
nC
V
GS = 1
0 V, I
D = 14A
Q
GS
Gate-to-Source Charge
5.0
-
-18
nC
V
DS = 200 V
Q
Gd
Gate-to-Drain (“Miller”) Charge
25
-
65
nC
See note 4
t
D(on)
Turn-On Delay Time
-
--
-
-35
ns
V
DD = 200 V, ID = 14 A, RG = 2.35
t
r
Rise Time
-
--
-
190
ns
See note 4
t
D(off)
Turn-Off Delay Time
-
--
-
170
ns
t
r
Fall Time
-
--
-
130
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Typ.
Max.
Units
Test Conditions
V
SD
Diode Forward Voltage
-
--
-
1.7
V
T
J
= 25°C, I
S
= 14 A
3,VGS = 0 V
t
r
Reverse Recovery Time
-
--
-
1200
ns
T
J = 25°C, IF= 14 A,d
i/dt<100A/s
3
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
Test Conditions
R
thJC
Junction-to-Case
-
--
-
0.83
Mounting surface flat,
R
thCS
Case-to-sink
-
0.21
-
°C/W
smooth, and greased
R
thJA
Junction-to-Ambient
-
--
-
48
Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
@V
DD= 50 V, Starting TJ = 25°C, L = 100 H + 10%, RG = 25
, Peak I
L = 14 A
3. Pulse width < 300 s; Duty Cycle < 2%
4. See MIL-S-19500/543
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Parameter
JANTXV, JANTX, 2N6768
Units
I
D @
V
GS = 10V, TC = 25°C
Continuous Drain Current
14
A
I
D @
V
GS = 10V, TC = 100°C
Continuous Drain Current
9.0
A
I
DM
Pulsed Drain Current
1
56
A
P
D @
T
C = 25°C
Maximum Power Dissipation
150
W
Linear Derating Factor
1.2
W/°C
V
GS
Gate-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy
2
11.3
4
mJ
I
AR
Avalanche Current
1
14
4
A
TJ
Operating Junction
-55 to 150
°C
TSTG
Storage Temperature Range
Lead Temperature
300(.06 from case for 10 sec)
°C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (T
C = 25°C unless otherwise noted
2N6764, JANTX2N6764, JANTXV2N6764
2N6768, JANTX2N6768, JANTXV2N6768
2N6766, JANTX2N6766, JANTXV2N6766
2N6770, JANTX2N6770, JANTXV2N6770
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6768T1 | 14 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 2N6768 | 14 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 2N6768TX | 14 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 2N6768TX | 14 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 2N6768TX | 14 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6770T1 | 制造商:Microsemi Corporation 功能描述:MOSFET N CH 500V 12A TO-254AA |
| 2N6771 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| 2N6772 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| 2N6773 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| 2N6773DR6220 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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