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参数资料
| 型号： | 2N6782-QR |
| 厂商： | SEMELAB LTD |
| 元件分类： | JFETs |
| 英文描述： | 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封装： | TO-39, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 57K |
| 代理商： | 2N6782-QR |
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
nA
mA
A
V
V
S ( )
pF
ns
A
V
nS
°C\W
2N6782
Document Number 3093
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
100*
2*
4.0*
1*
4.0*
100*
200*
-100*
0.25*
1*
1
3.5
2.1*
0.6*
1.08*
1.0*
3.0*
60*
200*
40*
100*
10*
25*
15*
25*
20*
3.5*
14
1.5*
200
8.33*
175
VGS = 0
ID = 0.25mA
VDS = VGS
ID = 0.5A
VDS = 0
TA = 125°C
VGS = 20V
VDS = 0
TA = 125°C
VGS = -20V
VDS = 80V.
VGS =0
VDS = 100v
VGS = 0
TC = 125°C
VGS = 10V
ID = 3.5A
VGS = 10V
ID = 2.25A
TC = 125°C
VDS = 5V
IDS = 2.25A
VGS = 0
VDS = 25V
f = 1MHz
VDD = 34V
ID = 2.25A
RG = 50
RL = 15
(MOSFET switching times are essentially
independent of operating temperature.)
Modified MOS POWER
symbol showing the intergal
P-N junction rectifier.
IS = 3.5A
VGS = 0
TJ = 25°C
IF =IS
TJ = 25°C
di / dt = 100A/s
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage Forward
Gate Body Leakage Reverse
Zero Gate Voltage Drain Current
On State Drain Current1
Static Drain Source On-State
Voltage1
Static Drain Source On-State
Resistance1
Forward Transductance 1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current Body
Diode
Source Current1 (Body Diode)
Diode Forward Voltage 1
Reverse Recovery Time
BVDSS
VGS(th)
IGSSF
IGSSR
IDSS
ID(on)
VDS(on)
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
BODY– DRAIN DIODE RATINGS & CHARACTERISTICS
,
5
/
THERMAL CHARACTERISTICS
RθJC
RθJA
Notes
1) Pulse Test: Pulse Width
≤ 300s, δ≤ 2%
* JEDEC registered Values
Thermal Resistance Junction – Case
Thermal Resistance Junction – Ambient
Free Air Operation
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PDF描述 |
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| 2N4912X-JQR | 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N6077CECC-C | 7 A, 275 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N6275A-JQR-B | 50 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6782U | 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
| 2N6783 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.2A I(D) | TO-39 |
| 2N6784 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 2.25A 3PIN TO-39 - Bulk 制造商:International Rectifier 功能描述:N CH MOSFET, 200V, 2.25A, TO-205AF; Transistor Polarity:N Channel; Continuous Drain Current Id:2.25A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 2.25A 3-Pin TO-39 |
| 2N6784JANTX | 制造商:Int'L Rectifier 功能描述:Trans MOSFET N-CH 200V 2.25A 3-Pin TO-39 |
| 2N6784JANTXV | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 2.25A 3-Pin TO-39 |
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