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参数资料
| 型号： | 2N6782LCC4-JQR-A |
| 厂商： | SEMELAB LTD |
| 元件分类： | JFETs |
| 英文描述： | 3.5 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HERMETIC SEALED, LCC-18 |
| 文件页数： | 1/3页 |
| 文件大小： | 29K |
| 代理商： | 2N6782LCC4-JQR-A |
2N6782LCC4
10/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
VGS
Gate – Source Voltage
ID
Continuous Drain Current
(VGS = 10V , Tcase = 25°C)
ID
Continuous Drain Current
(VGS = 10V , Tcase = 100°C)
IDM
Pulsed Drain Current 1
PD
Power Dissipation @ Tcase = 25°C
Linear Derating Factor
EAS
Single Pulse Avalanche Energy 2
dv/dt
Peak Diode Recovery 3
TJ , Tstg
Operating and Storage Temperature Range
Surface Temperature ( for 5 sec).
±20V
3.1A
2.0A
12A
11W
0.09W/°C
68mJ
5.5V/ns
-55 to +150°C
300°C
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
FEATURES
SURFACE MOUNT
SMALL FOORPRINT
HERMETICALLY SEALED
DYNAMIC dv/dt RATING
AVALANCHE ENERGY RATING
SIMPLE DRIVE REQUIREMENTS
LIGHTWEIGHT
LCC4
Notes
1) Pulse Test: Pulse Width
300ms, d 2%
2) @ VDD = 50V , L 570mH , RG = 25W , Peak IL = 14A , Starting TJ = 25°C
3) @ ISD 14A , di/dt 140A/ms , VDD BVDSS , TJ 150°C , Suggested RG = 7.5W
VDSS
100V
ID(cont)
3.1A
RDS(on)
0.6
W
1.39 (0.055)
1.15 (0.045)
0.76 (0.030)
0.51 (0.020)
1.39 (0.055)
1.02 (0.040)
15 16
13
12
14
3
4
5
6
7
17
18
1
2
11
10
8
9
9.14 (0.360)
8.64 (0.340)
1.27 (0.050)
1.07 (0.040)
≈ 2.16 (0.085)
7.62 (0.300)
7.12 (0.280)
1.65 (0.065)
1.40 (0.055)
0.33 (0.013)
0.08 (0.003)
0.43 (0.017)
0.18 (0.007
Rad.
MOSFET
TRANSISTOR
PINS
GATE
BASE
4,5
DRAIN
COLLECTOR
1,2,15,16,17,18
SOURCE
EMITTER
6,7,8,9,10,11,12,13
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6782TXV | 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6782TX | 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6782TXV | 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6782 | 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6782TXV | 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6782U | 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
| 2N6783 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.2A I(D) | TO-39 |
| 2N6784 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 2.25A 3PIN TO-39 - Bulk 制造商:International Rectifier 功能描述:N CH MOSFET, 200V, 2.25A, TO-205AF; Transistor Polarity:N Channel; Continuous Drain Current Id:2.25A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 2.25A 3-Pin TO-39 |
| 2N6784JANTX | 制造商:Int'L Rectifier 功能描述:Trans MOSFET N-CH 200V 2.25A 3-Pin TO-39 |
| 2N6784JANTXV | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 2.25A 3-Pin TO-39 |
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