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参数资料
| 型号： | 2N6794LCC4 |
| 厂商： | SEMELAB LTD |
| 元件分类： | JFETs |
| 英文描述： | 1.5 A, 500 V, 3.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HERMETIC SEALED, CERAMIC, LCC4-18 |
| 文件页数： | 1/2页 |
| 文件大小： | 20K |
| 代理商： | 2N6794LCC4 |
2N6794LCC4
Document Number 2947
Issue 2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
VGS
Gate – Source Voltage
ID
Continuous Drain Current
(VGS = 10V , Tcase = 25°C)
ID
Continuous Drain Current
(VGS = 10V , Tcase = 100°C)
IDM
Pulsed Drain Current 1
PD
Power Dissipation @ Tcase = 25°C
Linear Derating Factor
EAS
Single Pulse Avalanche Energy 2
dv/dt
Peak Diode Recovery 3
TJ , Tstg
Operating and Storage Temperature Range
RθJC
Thermal Resistance Junction to Case
RθJCA
Thermal Resistance Junction-to-Ambient
±20V
1.5A
1A
6.5A
20W
0.16W/°C
0.11mJ
3.5V/ns
-55 to +150°C
6.25°C/W
175°C/W
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
FEATURES
HERMETICALLY SEALED
DYNAMIC dv/dt RATING
AVALANCHE ENERGY RATING
SIMPLE DRIVE REQUIREMENTS
Notes
1) Pulse Test: Pulse Width
≤ 300s, δ≤ 2%
2) @ VDD = 50V , L ≥ 570H , RG = 25 , Peak IL = 14A , Starting TJ = 25°C
3) @ ISD ≤ 14A , di/dt ≤ 140A/s , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 7.5
VDSS
500V
ID(cont)
1.5A
RDS(on)
3.0
LCC4 CERAMIC SURFACE MOUNT PACKAGE
Underside View
Pads 6, 7, 8, 9, 10, 11, 12, 13.
Source
Pads 4,5
Gate
Pads 1,2,15,16,17,18
Drain
Pads 3,14
Not Connected
1.39 (0.055)
1.15 (0.045)
0.76 (0.030)
0.51 (0.020)
1.39 (0.055)
1.02 (0.040)
15 16
13
12
14
3
4
5
6
7
17
18
1
2
11
10
8
9
9.14 (0.360)
8.64 (0.340)
1.27 (0.050)
1.07 (0.040)
≈ 2.16 (0.085)
7.62 (0.300)
7.12 (0.280)
1.65 (0.065)
1.40 (0.055)
0.33 (0.013)
0.08 (0.003)
0.43 (0.017)
0.18 (0.007
Rad.
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6794LCC4E4 | 1.5 A, 500 V, 3.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| 2N6796 | 8 A, 100 V, 0.195 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6798 | 5.5 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6798 | 5.5 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6794UJANTXV | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 500V 1.4A 18-Pin LLCC |
| 2N6795 | 制造商:International Rectifier 功能描述: |
| 2N6796 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 32A 3-Pin TO-39 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 8A 3PIN TO-39 - Bulk 制造商:International Rectifier 功能描述:N CHANNEL MOSFET 100V 8A TO- 制造商:International Rectifier 功能描述:MOSFET N TO-39 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-39 制造商:International Rectifier 功能描述:MOSFET, N, TO-39 制造商:TT Electronics/ Semelab 功能描述:MOSFET, N, TO-39 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 100V, 8A TO-205AF; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No 制造商:SEMELAB 功能描述:MOSFET, N, TO-39; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:25W ;RoHS Compliant: Yes 制造商:TT Electronics / Semelab 功能描述:MOSFET N-Channel 100V 8A TO-39 |
| 2N6796 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-39 |
| 2N6796_03 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:TMOS FET ENHANCEMENT N - CHANNEL |
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