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参数资料
| 型号： | 2N6796-JQR |
| 厂商： | SEMELAB LTD |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封装： | TO-39, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 18K |
| 代理商： | 2N6796-JQR |
Document Number 3095
Issue 1
2N6796
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain–Source Breakdown Voltage
VGS(th)
Gate Thresshold Voltage1
IGSS
Gate–Body Leakage
IDSS
Zero Gate Voltage Drain Current
rDS(on)
Drain–Source On–Resistance1
V
DS(on)
Drain–Source On–Voltage1
gfs
Forward Transconductance1
Ciss
Input Capacitance
Coss
Output capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn–On Delay Time1
tr
RiseTime1
td(off)
Turn off Delay Time1
tf
FallTime1
VSD
Diode Forward Voltage1
ton
Forward Turn OnTime1
trr
Reverse Recovery Time1
VGS = 0
ID = 0.25mA
VDS=VGS
ID = 0.5mA
VDS = 0
VGS = ±20V
VDS = Rated VDSS
VGS = 0V
Tj = 125°C
VGS = 10V
ID = 5.0A
TA = 125°C
VGS = 10V
ID = 8.0A
VGS = 15V
ID = 5.0A
VDS = 25V
VGS = 0
f = 1.0MHZ
VDD = 30V
RGEN = 50
ID = 5.0A
RG = 7.5 ohms
IS = Rated ID(on)
VGS = 0
100
2.0
4.0
±100
250
1000
0.18
0.35
1.56
3.0
9.0
350
900
150
500
50
150
30
75
40
45
5.5
Negligible
300
V
nA
A
V
s( )
pF
ns
V
ns
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
1) Pulse test : Pulse Width < 300
s ,Duty Cycle < 2%
2) Pulse width limited by maximum juction temperature
SOURCE DRAIN DIODE RATING CHARACTERISTICS
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6796.MOD | 8 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6797 | 5.5 A, 150 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6798PBF | 5.5 A, 200 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6800 | 3 A, 400 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6800 | 3 A, 400 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6796LCC4 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N-CHANNEL POWER MOSFET |
| 2N6796U | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 100V 18LCC |
| 2N6796UJANTX | 制造商:International Rectifier 功能描述: |
| 2N6797 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3.5A I(D) | TO-39 |
| 2N6798 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 22A 3-Pin TO-39 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 5.5A 3PIN TO-39 - Bulk 制造商:International Rectifier 功能描述:N CH MOSFET 200V 5.5A TO-205AF 制造商:International Rectifier 功能描述:N CH MOSFET, 200V, 5.5A, TO-205AF 制造商:International Rectifier 功能描述:N CH MOSFET, 200V, 5.5A, TO-205AF; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No |
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